Galvanomagnetic effects in semiconductors

Field effect on magnetoresistance of N-type indium antimonide

It is shown that in noncubic solids the ``Hall mobilities'' derived from Hall voltage and Hall current measurements are not identical. Their relation together with a consistency test for the measured ``Hall mobilities'' are obtained for orthorhombic symmetry. The observed quantities in Hall effect measurements on insulators are influenced by the presence of a space charge in the solid. The electromagnetic field equations are solved inside a cuboid of an orthorhombic solid by a Green function method. The results are used to relate the observed Hall voltage in the four‐point‐probe technique and the observed Hall current in the split‐back‐electrode technique to the fundamental parameters governing the Hall effect, for space‐charge‐limited currents under various trapping conditions. The corresponding relation for Ohmic conduction is also given. The advantages of using the Hall current method for insulators rather than the Hall voltage method are stressed.

Phenomenological Theory of the Hall Effect in Insulators

The purpose of this lecture is to present a survey of the electronic properties of organic metals which have been the matter of very intensive work for the last 5 years. Already extended review articles have been published in that subject (1,2,3,4).

Electronic Properties of Organic Conductors: Pressure Effects

CONTENTS I. Introduction 538 II. Formulation of Theory of Thermomagnetic Phenomena 540 III. Nondissipative Electron Fluxes in a Quantizing Magnetic Field 542 IV. Dissipative Electron Fluxes in the Elastic-scattering Approximation 546 V. Dissipative Fluxes with Account of Inelastic Scattering of Electrons and Phonons 548 VI. Fluxes along the Magnetic Field and Longitudinal Thermomagnetic Phenomena 550 VII. Comparison of Theory with Experiment 552 Appendix 559 a) Kinetic Equation for Electrons 559 b) Kinetic Equations for Electron-phonon Systems 560 Literature 562

https://iopscience.iop.org/article/10.1070/PU1969v011n04ABEH003767/pdf

Quantum theory of thermomagnetic phenomena in metals and semiconductors

A method for growing single‐crystal Mg2Pb is described. A Bridgman method is used, starting with a nonstoichiometric melt (<31.3 at.% Pb). This requirement follows from the recent discovery that Mg2Pb is not congruently melting but forms from a peritectic reaction. The usefulness of an x‐ray microprobe for the analysis of crystal growing problems is demonstrated by a study of eutectic inclusions observed in some Mg2Pb ingots. Measurements are reported of the angular dependence of the magnetoresistance and the magnetic field dependence of the Hall coefficient in fields up to 5200 G and at temperatures of 4.2° and 77°K. The phenomenological coefficients, b, c, and d, determined from the angular dependence of the magnetoresistance show strong field dependence at 4.2°K and obey the symmetry condition for [100] oriented many valley ellipsoids at all fields and temperatures. The Hall coefficient exhibits a strong field dependence, similar to p‐type Ge, which has been fitted by a simple model consisting of two s...

Galvanomagnetic effects in semiconductors

Citations

Field effect on magnetoresistance of N-type indium antimonide

Phenomenological Theory of the Hall Effect in Insulators

Electronic Properties of Organic Conductors: Pressure Effects

Quantum theory of thermomagnetic phenomena in metals and semiconductors

Crystal Growth and Galvanomagnetic Properties of Mg2Pb

Related Papers (5)

Band structure of indium antimonide

Semiconductor Statistics

The Hall effect and related phenomena

Effect of Random Inhomogeneities on Electrical and Galvanomagnetic Measurements

Physics of III-V compounds