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Galvanomagnetic effects in semiconductors
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The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.read more
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Journal ArticleDOI
Hall effect in the organic conductor (TMTSF)2NO3
TL;DR: Hall effect measurements of the organic conductor (TMTSF) 2 NO 3 at low temperatures (1.8 ≤ T ≤7 K) and high magnetic fields (H ≤ 8.5 T) are reported in this paper.
Journal ArticleDOI
Emission of HF radiation in n+n(x)n+ GaAs devices under crossed electric and magnetic fields
TL;DR: In this paper, the authors investigated the possibility of altering Landau levels by varying the doping density in the active n-layer in sandwiched n+n(x)n+ structures.
Book ChapterDOI
Characterization of III-V Semiconductors.
Donald C. Reynolds,David C. Look +1 more
TL;DR: In this article, Impurities and defects in semiconducting and semi-insulating GaAs and InP have been investigated by electrical, optical, and mass spectroscopic techniques.
Journal ArticleDOI
Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation
TL;DR: In this paper, the theoretical hole transport characteristics of the cubic phase of p-type GaN, that takes the Hall coefficient anisotropy factor of the energy surface for heavy- and light-hole bands into consideration, are investigated over a wide range of temperature using the "relaxation time approximation".