Journal ArticleDOI
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
M. Milojevic,Francisco S. Aguirre-Tostado,Christopher L. Hinkle,Hyunchul Kim,Eric M. Vogel,Jiyoung Kim,Robert M. Wallace +6 more
TLDR
In this paper, the reduction in III-V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS) TMA is found to reduce the interfacial Oxides during the initial exposure.Abstract:
The reduction in III–V interfacial oxides by atomic layer deposition of Al2O3 on InGaAs is studied by interrupting the deposition following individual trimethyl aluminum (TMA) and water steps (half cycles) and interrogation of the resultant surface reactions using in situ monochromatic x-ray photoelectron spectroscopy (XPS) TMA is found to reduce the interfacial oxides during the initial exposure Concentrations of Ga oxide on the surface processed at 300 °C are reduced to a concentration on the order of a monolayer, while AsOx species are below the level of detection of XPSread more
Citations
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Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
Gang He,Xiaoshuang Chen,Z.Q. Sun +2 more
TL;DR: In this article, the authors provide an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates, and explore the possible influences of these hafnium-based gate dielectric on the current and future applications for nano-MOSFET devices.
Journal ArticleDOI
Electronic surface and dielectric interface states on GaN and AlGaN
TL;DR: In this article, the authors summarize the current understanding of the gate leakage current and current collapse mechanisms, where awareness of the surface defects is the key to controlling and improving device performance.
Journal ArticleDOI
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
Byungha Shin,Justin R. Weber,Rathnait D. Long,Paul K. Hurley,Chris G. Van de Walle,Paul C. McIntyre +5 more
TL;DR: In this article, experimental and theoretical studies of defects producing fixed charge within Al2O3 layers grown by atomic layer deposition (ALD) on In0.53Ga0.47As(001) substrates and the effects of hydrogen passivation of these defects were reported.
Journal ArticleDOI
A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers
Eamon O'Connor,Barry Brennan,Vladimir Djara,Karim Cherkaoui,Scott Monaghan,S. B. Newcomb,R. Contreras,M. Milojevic,Gregory Hughes,Martyn E. Pemble,Robert M. Wallace,Paul K. Hurley +11 more
Abstract: In this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH4)2S concentrations in the passivation of n-type and p-type In053Ga047As Samples were degreased and immersed in aqueous (NH4)2S solutions of concentrations 22%, 10%, 5%, or 1% for 20 min at 295 K, immediately prior to atomic layer deposition of Al2O3 Multi-frequency capacitance-voltage (C-V) results on capacitor structures indicate that the lowest frequency dispersion over the bias range examined occurs for n-type and p-type devices treated with the 10%(NH4)2S solution The deleterious effect on device behavior of increased ambient exposure time after removal from 10%(NH4)2S solution is also presented Estimations of the interface state defect density (Dit) for the optimum 10%(NH4)2S passivated In053Ga047As devices extracted using an approximation to the conductance method, and also extracted using the temperature-modified high-low frequency C-V method, indicate that the same defect is pre
Journal ArticleDOI
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications
TL;DR: In this article, the authors summarized the recent progress in the understanding of the dielectric/III-V interface, particularly in regard to the interfacial chemistry that impacts the resultant electrical behavior observed.
References
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Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
GaAs interfacial self-cleaning by atomic layer deposition
Christopher L. Hinkle,A. M. Sonnet,Eric M. Vogel,Stephen McDonnell,G. Hughes,M. Milojevic,Bong-Ki Lee,Francisco S. Aguirre-Tostado,K. J. Choi,Kim Hyo-Sik,Jiyoung Kim,Robert M. Wallace +11 more
TL;DR: In this paper, the reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 was studied using in situ monochromatic x-ray photoelectron spectroscopy.
Journal ArticleDOI
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
TL;DR: Al2O3 was deposited on In0.15Ga0.85As∕GaAs using atomic-layer deposition (ALD) and excellent electrical properties were obtained, in terms of low electrical leakage current density (10−8 to 10−9A∕cm2) and low interfacial density of states (Dit) in the range of 1012cm−2eV−1 as discussed by the authors.
Journal ArticleDOI
HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
Martin M. Frank,Glen D. Wilk,Dmitri Starodub,Torgny Gustafsson,Eric Garfunkel,Yves J. Chabal,J.L. Grazul,David A. Muller +7 more
TL;DR: In this paper, the authors have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition and showed that as-deposited films are continuous and predominantly amorphous.