Journal ArticleDOI
Helical Nanoholes Bored in Silicon by Wet Chemical Etching Using Platinum Nanoparticles as Catalyst
Kazuya Tsujino,Michio Matsumura +1 more
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This article is published in Electrochemical and Solid State Letters.The article was published on 2005-12-01. It has received 134 citations till now. The article focuses on the topics: Isotropic etching & Platinum nanoparticles.read more
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Metal-Assisted Chemical Etching of Silicon: A Review
TL;DR: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching, and introduces templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithographic, and block-copolymer masks.
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Metal-assisted chemical etching of silicon in HF–H2O2
TL;DR: In this paper, metal-assisted etching of silicon in HF/H2O2//H 2O solutions with Ag nanoparticles as catalyst agents was investigated, and the dissolution mechanisms were discussed on the basis of a localized hole injection from the Ag particles into Si and in terms of the well known chemistry of Si dissolution in HF-based chemical and electrochemical systems.
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Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching.
Zhipeng Huang,Xuanxiong Zhang,Manfred Dr. Reiche,Lifeng Liu,Woo Lee,Tomohiro Shimizu,Stephan Senz,Ulrich Gösele +7 more
TL;DR: Large-area high density silicon nanowire arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate.
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Ordered arrays of vertically aligned [110] silicon nanowires by suppressing the crystallographically preferred etching directions.
Zhipeng Huang,Tomohiro Shimizu,Stephan Senz,Zhang Zhang,Xuanxiong Zhang,Woo Lee,Nadine Geyer,Ulrich Gösele +7 more
TL;DR: A generic method was developed for the fabrication of wafer-scale vertically aligned arrays of epitaxial [110] Si nanowires on a Si(110) substrate based on an ultrathin porous anodic alumina mask, while a prepatterning of the substrate prior to the metal depostion is not necessary.
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Pore formation in silicon by wet etching using micrometre-sized metal particles as catalysts
TL;DR: Au, Pt, or Ag particles with particle sizes of ca. 1 μm were used as catalysts for boring pores in p-type Si(100) wafers by wet etching in aqueous solutions containing hydrofluoric acid and hydrogen peroxide as mentioned in this paper.
References
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Journal ArticleDOI
Metal-assisted chemical etching in HF/H2O2 produces porous silicon
Xiuling Li,Paul W. Bohn +1 more
TL;DR: In this paper, a simple and effective method is presented for producing light-emitting porous silicon (PSi) using a thin layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2 depending on the type of metal deposited and Si doping type and doping level.
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A Formation Mechanism for Catalytically Grown Helix-Shaped Graphite Nanotubes
TL;DR: The concept of a spatial-velocity hodograph is introduced to describe quantitatively the extrusion of a carbon tubule from a catalytic particle and why the formation process induces stresses that may lead to "spontaneous" plastic deformation of the tubule.
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The Physics of Macropore Formation in Low‐Doped p‐Type Silicon
Volker Lehmann,S. Ronnebeck +1 more
TL;DR: In this article, the pore walls in hydrofluoric acid are caused by a depletion of holes due to the n-type doping of the substrate, and the dimensions of the pores are estimated based on these findings.
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Microelectromechanical systems (MEMS):fabrication, design and applications
TL;DR: In this paper, a wide variety of transduction mechanisms can be used to convert real-world signals from one form of energy to another, thereby enabling many different microsensors, microactuators and microsystems.