Journal ArticleDOI
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.
Tania Roy,Mahmut Tosun,Mahmut Tosun,Xi Cao,Hui Fang,Hui Fang,Der Hsien Lien,Der Hsien Lien,Der Hsien Lien,Peida Zhao,Peida Zhao,Yu Ze Chen,Yu-Lun Chueh,Jing Guo,Ali Javey,Ali Javey +15 more
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TLDR
This work experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture with important implications toward the design of atomically thin tunnel transistors.Abstract:
Two-dimensional layered semiconductors present a promising material platform for band-to-band-tunneling devices given their homogeneous band edge steepness due to their atomically flat thickness. Here, we experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture. The electric potential and carrier concentration of MoS2 and WSe2 layers are independently controlled by the two symmetric gates. The same device can be gate modulated to behave as either an Esaki diode with negative differential resistance, a backward diode with large reverse bias tunneling current, or a forward rectifying diode with low reverse bias current. Notably, a high gate coupling efficiency of ∼80% is obtained for tuning the interlayer band alignments, arising from weak electrostatic screening by the atomically thin layers. This work presents an advance in the fundamental understanding of the interlayer coupling and electron tunneling in ...read more
Citations
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Journal ArticleDOI
Van der Waals heterostructures and devices
TL;DR: In this paper, the authors review the recent progress and challenges of 2D van der Waals interactions and offer a perspective on the exploration of 2DLM-based vdWHs for future application in electronics and optoelectronics.
Journal ArticleDOI
Two-dimensional semiconductors for transistors
TL;DR: In this article, a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FET in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene.
Journal ArticleDOI
Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures
TL;DR: This review of the challenges in the CVD growth of 2D materials highlights recent advances in the controlled growth of single crystal 2Dmaterials, with an emphasis on semiconducting transition metal dichalcogenides.
Journal ArticleDOI
A subthermionic tunnel field-effect transistor with an atomically thin channel.
Deblina Sarkar,Xuejun Xie,Wei Liu,Wei Cao,Jiahao Kang,Yongji Gong,Stephan Kraemer,Pulickel M. Ajayan,Kaustav Banerjee +8 more
TL;DR: This paper demonstrates band-to-band tunnel field-effect transistors (tunnel-FETs), based on a two-dimensional semiconductor, that exhibit steep turn-on and is the only planar architecture tunnel-fET to achieve subthermionic subthreshold swing over four decades of drain current, and is also the only tunnel- FET (in any architecture) to achieve this at a low power-supply voltage of 0.1 volts.
References
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Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Field-effect tunneling transistor based on vertical graphene heterostructures.
L. Britnell,Roman V. Gorbachev,Rashid Jalil,Branson D. Belle,Fred Schedin,Artem Mishchenko,Thanasis Georgiou,Mikhail I. Katsnelson,Laurence Eaves,Sergey V. Morozov,Nuno M. R. Peres,Nuno M. R. Peres,Jon Leist,Andre K. Geim,K. S. Novoselov,Leonid Ponomarenko +15 more
TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.
Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TL;DR: Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
Journal ArticleDOI
Atomically thin p–n junctions with van der Waals heterointerfaces
Chul Ho Lee,Chul Ho Lee,Gwan Hyoung Lee,Arend M. van der Zande,Wenchao Chen,Yilei Li,Minyong Han,Xu Cui,Ghidewon Arefe,Colin Nuckolls,Tony F. Heinz,Jing Guo,James Hone,Philip Kim +13 more
TL;DR: The tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes in atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides.