Journal ArticleDOI
High-mobility n-channel organic field-effect transistors based on epitaxially grown C60 films
Th. B. Singh,Nenad Marjanovic,Gebhard J. Matt,Serap Günes,Niyazi Serdar Sariciftci,A. Montaigne Ramil,A. Andreev,Helmut Sitter,Reinhard Schwödiauer,Siegfried Bauer +9 more
TLDR
In this article, C60-based n-channel organic field effect transistors with mobility in the range of 4-1-cm2-V−1-s−1 were presented.About:
This article is published in Organic Electronics.The article was published on 2005-06-01. It has received 142 citations till now. The article focuses on the topics: Gate dielectric & Dielectric.read more
Citations
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Journal ArticleDOI
Polymer–Fullerene Composite Solar Cells
TL;DR: Polymer-based organic photovoltaic systems hold the promise for a cost-effective, lightweight solar energy conversion platform, which could benefit from simple solution processing of the active layer.
Journal ArticleDOI
Synthesis of Conjugated Polymers for Organic Solar Cell Applications
TL;DR: Fluorene-Based Copolymers ContainingPhosphorescent Complexes and Carbazole-Based Conjugated Polymers R5.1.3.
Journal ArticleDOI
n-Type organic semiconductors in organic electronics.
TL;DR: This paper focuses upon recent developments in several classes of n-type materials and the design guidelines used to develop them.
Journal ArticleDOI
The origin of high efficiency in low-temperature solution-processable bilayer organometal halide hybrid solar cells
Shuangyong Sun,Teddy Salim,Nripan Mathews,Martial Duchamp,Chris Boothroyd,Guichuan Xing,Tze Chien Sum,Yeng Ming Lam,Yeng Ming Lam +8 more
TL;DR: In this paper, the authors reported the origin of the high efficiency in solution-processable bilayer solar cells based on methylammonium lead iodide (CH3NH3PbI3) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM).
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Controlling the Morphology and Performance of Bulk Heterojunctions in Solar Cells. Lessons Learned from the Benchmark Poly(3-hexylthiophene):[6,6]-Phenyl-C61-butyric Acid Methyl Ester System
TL;DR: Heterojunctions in Solar Cells: Lessons Learned from the Benchmark Poly(3-hexylthiophene):[6,6]-Phenyl‐C61-butyric Acid Methyl Ester System Minh Trung Dang.
References
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Journal ArticleDOI
Origin of the Open Circuit Voltage of Plastic Solar Cells
Christoph J. Brabec,Antonio Cravino,Dieter Meissner,Niyazi Serdar Sariciftci,Thomas Fromherz,Minze T. Rispens,Luis Sánchez,Jan C. Hummelen +7 more
TL;DR: A series of highly soluble fullerene derivatives with varying acceptor strengths (i.e., first reduction potentials) was synthesized and used as electron acceptors in plastic solar cells as discussed by the authors.
Journal ArticleDOI
Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals
Vikram C. Sundar,Jana Zaumseil,Vitaly Podzorov,Etienne Menard,R. L. Willett,Takao Someya,Michael Gershenson,John A. Rogers +7 more
TL;DR: This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as ∼15 cm2/V·s and subthreshold slopes as low as 2nF·V/decade·cm2.
Journal ArticleDOI
Large-scale complementary integrated circuits based on organic transistors
Brian Keith Crone,Ananth Dodabalapur,Y. Y. Lin,Robert William Filas,Zhenan Bao,A. LaDuca,Rahul Sarpeshkar,Rahul Sarpeshkar,Howard E. Katz,Wenjie Li +9 more
TL;DR: It is shown that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of ∼1 kHz in clocked sequential complementary circuits.
Journal ArticleDOI
Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks
John A. Rogers,Zhenan Bao,Kirk W. Baldwin,Ananth Dodabalapur,Brian Keith Crone,Venkataram Reddy Raju,Valerie Jeanne Kuck,Howard E. Katz,Karl R. Amundson,Ewing Jay Britton,Paul Drzaic +10 more
TL;DR: The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work.