Hole density and acceptor-type defects in MBE-grown GaSb1-x Bix
Natalie Segercrantz,Jonatan Slotte,Ilja Makkonen,Filip Tuomisto,Ian C. Sandall,M. J. Ashwin,Tim D. Veal +6 more
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In this article, acceptor-type defects in GaSb1−xBix grown by molecular beam epitaxy were studied and it was shown that both Ga vacancies and Ga antisites contribute to the hole density and the proportion of the two acceptor type defects vary in the layers.Abstract:
We study acceptor-type defects in GaSb1−xBix grown by molecular beam epitaxy. The hole density of the GaSb1−xBix layers, from capacitance-voltage measurements of Schottky diodes, is higher than that of the binary alloys and increases linearly up to 1019 − cm 3 with the Bi content. Positron annihilation spectroscopy and ab initio calculations show that both Ga vacancies and Ga antisites contribute to the hole density and that the proportion of the two acceptor-type defects vary in the layers. The modification of the band gap due to Bi incorporation as well as the growth parameters are suggested to affect the concentrations of acceptor-type defects.read more
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Journal Article
New Semiconductor Alloy GaAs_ Bi_x Grown by Metal Organic Vapor Phase Epitaxy
Kunishige Oe,Hiroshi Okamoto +1 more
TL;DR: In this paper, a new semiconductor alloy material, GaAs1-xBix, was created by metal organic vapor phase epitaxial (MOVPE) growth, and X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory.
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Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
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Defect identification in semiconductors with positron annihilation: experiment and theory
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Dilute bismide and nitride alloys for mid-IR optoelectronic devices
TL;DR: In this paper, a review of theoretical simulations, epitaxial growth, material characterizations, and devices of dilute bismides and dilute nitrides is presented.
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Raman spectroscopy of GaSb1−xBix alloys with high Bi content
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TL;DR: In this article, the crystal morphology and Raman scattering features of high structural quality GaSb1−xBix alloys grown by molecular beam epitaxy with a high Bi content (x up to ∼0.10).
References
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Georg Kresse,Jürgen Furthmüller +1 more
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Defect identification in semiconductors with positron annihilation: Experiment and theory
Filip Tuomisto,Ilja Makkonen +1 more
TL;DR: Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors and combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings as mentioned in this paper.
Journal ArticleDOI
Giant spin-orbit bowing in GaAs1-xBix.
Brian Fluegel,Sebastien Francoeur,Angelo Mascarenhas,Sebastien Tixier,Erin C. Young,Thomas Tiedje +5 more
TL;DR: This is the first observation of a large relativistic correction to the host electronic band structure induced by just a few percent of isoelectronic doping in a semiconductor material, which opens up the possibility of tailoring the spin-orbit splitting in semiconductors for spintronic applications.