Journal ArticleDOI
Horizontal growth of MoS2 nanowires by chemical vapour deposition
TLDR
In this article, a single step route for the synthesis of MoS2 wires using a chemical vapour deposition (CVD) method was described, and the horizontally oriented MoS 2 nanowires on SiO2/Si substrate can be synthesized successfully.Abstract:
We describe a single step route for the synthesis of MoS2 wires using a chemical vapour deposition (CVD) method. By tuning the CVD growth parameters, the horizontally oriented MoS2 nanowires on SiO2/Si substrate can be synthesized successfully. The MoS2 nanowire has height of about 93 nm and width of about 402 nm with multilayer structure. Good local photoluminescence (PL) properties can be observed for these horizontal MoS2 nanowires. The successful fabrication and prominent PL effect of the horizontal MoS2 nanowires provide potential applications for the MoS2-based in planar devices.read more
Citations
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Journal ArticleDOI
Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications.
Huaxin Yi,Churong Ma,Wang Wang,Weiwei Cao,Hailin Yang,Yuhang Ma,Zhaoqiang Zheng,Yichao Zou,Zexiang Deng,Jiandong Yao,Guowei Yang +10 more
TL;DR: In this paper , a cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires, which demonstrate a broadband photoresponse across 370.6 to 1310 nm.
Journal ArticleDOI
化学气相沉积法制备MoS2的研究进展 Research Progress on MoS2 Prepared by Chemical Vapor Deposition
TL;DR: In this paper, the effect of the reaction time, carrier gas flow rate, stoichiometric ratio of precursors and substrate position on the morphology and structure of two-dimensional layered MoS2 was reviewed.
References
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Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
TL;DR: This Review describes how the tunable electronic structure of TMDs makes them attractive for a variety of applications, as well as electrically active materials in opto-electronics.
Journal ArticleDOI
From bulk to monolayer MoS2: evolution of Raman scattering
Hong Li,Qing Zhang,Chin Chong Yap,Beng Kang Tay,Teo Hang Tong Edwin,A. Olivier,Dominique Baillargeat +6 more
TL;DR: In this paper, it was shown that only the Raman frequencies of E 1 and A 1g peaks vary monotonously with the layer number of ultrathin Molybdenum disulfi de (MoS 2 ).
Journal ArticleDOI
EMS-A software package for electron diffraction analysis and HREM image simulation in materials science
TL;DR: EMS as mentioned in this paper is a set of computer programs which have been developed not only for the simulation and analysis of high-resolution Electron Microscopy images, but also for the analysis of diffraction patterns.
Journal ArticleDOI
Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
Haiyan Nan,Zilu Wang,Wenhui Wang,Zheng Liang,Yan Lu,Qian Chen,Daowei He,Ping-Heng Tan,Feng Miao,Xinran Wang,Jinlan Wang,Zhenhua Ni +11 more
TL;DR: The results provide a new route for modulating the optical properties of two-dimensional semiconductors and the strong and stable PL from defects sites of MoS2 may have promising applications in optoelectronic devices.