Journal ArticleDOI
From bulk to monolayer MoS2: evolution of Raman scattering
Hong Li,Qing Zhang,Chin Chong Yap,Beng Kang Tay,Teo Hang Tong Edwin,A. Olivier,Dominique Baillargeat +6 more
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TLDR
In this paper, it was shown that only the Raman frequencies of E 1 and A 1g peaks vary monotonously with the layer number of ultrathin Molybdenum disulfi de (MoS 2 ).Abstract:
Molybdenum disulfi de (MoS 2 ) is systematically studied using Raman spectroscopy with ultraviolet and visible laser lines. It is shown that only the Raman frequencies of E 1 and A1g peaks vary monotonously with the layer number of ultrathin MoS 2 fl akes, while intensities or widths of the peaks vary arbitrarily. The coupling between electronic transitions and phonons are found to become weaker when the layer number of MoS 2 decreases, attributed to the increased electronic transition energies or elongated intralayer atomic bonds in ultrathin MoS 2 . The asymmetric Raman peak at 454 cm − 1 , which has been regarded as the overtone of longitudinal optical M phonons in bulk MoS 2 , is actually a combinational band involving a longitudinal acoustic mode (LA(M)) and an optical mode ( A2u ). Our fi ndings suggest a clear evolution of the coupling between electronic transition and phonon when MoS 2 is scaled down from three- to two-dimensional geometry.read more
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Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
Sheneve Z. Butler,Shawna M. Hollen,Linyou Cao,Yi Cui,Yi Cui,Jay Gupta,Humberto R. Gutierrez,Tony F. Heinz,Seung Sae Hong,Seung Sae Hong,Jiaxing Huang,Ariel Ismach,Ezekiel Johnston-Halperin,Masaru Kuno,Vladimir V. Plashnitsa,Richard D. Robinson,Rodney S. Ruoff,Sayeef Salahuddin,Jie Shan,Li Shi,Michael G. Spencer,Mauricio Terrones,Wolfgang Windl,Joshua E. Goldberger +23 more
TL;DR: The properties and advantages of single-, few-, and many-layer 2D materials in field-effect transistors, spin- and valley-tronics, thermoelectrics, and topological insulators, among many other applications are highlighted.
Journal ArticleDOI
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
Chaoliang Tan,Xiehong Cao,Xiehong Cao,Xue-Jun Wu,Qiyuan He,Jian Yang,Xiao Zhang,Junze Chen,Wei Zhao,Shikui Han,Gwang-Hyeon Nam,Melinda Sindoro,Hua Zhang +12 more
TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
Journal ArticleDOI
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
TL;DR: By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
Journal ArticleDOI
Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies
Hong Li,Charlie Tsai,Ai Leen Koh,Lili Cai,Alex W. Contryman,Alex W. Contryman,Alex H. Fragapane,Alex H. Fragapane,Jiheng Zhao,Hyun Soon Han,Hari C. Manoharan,Hari C. Manoharan,Frank Abild-Pedersen,Jens K. Nørskov,Jens K. Nørskov,Xiaolin Zheng +15 more
TL;DR: This work reports the first activation and optimization of the basal plane of monolayer 2H-MoS2 for HER by introducing sulphur (S) vacancies and strain, which allows it to achieve the highest intrinsic HER activity among molybdenum-sulphide-based catalysts.
Journal ArticleDOI
Bandgap engineering of strained monolayer and bilayer MoS2.
Hiram Conley,Bin Wang,Bin Wang,Jed I. Ziegler,Jed I. Ziegler,Richard F. Haglund,Richard F. Haglund,Sokrates T. Pantelides,Sokrates T. Pantelides,Kirill I. Bolotin,Kirill I. Bolotin +10 more
TL;DR: A demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides, with pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap.
References
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Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Emerging Photoluminescence in Monolayer MoS2
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi-Yung Chim,Giulia Galli,Feng Wang,Feng Wang +8 more
TL;DR: This observation shows that quantum confinement in layered d-electron materials like MoS(2), a prototypical metal dichalcogenide, provides new opportunities for engineering the electronic structure of matter at the nanoscale.
Journal ArticleDOI
Anomalous lattice vibrations of single- and few-layer MoS2.
TL;DR: This work exemplifies the evolution of structural parameters in layered materials in changing from the three-dimensional to the two-dimensional regime by characterized by Raman spectroscopy.