Journal ArticleDOI
Hysteresis of pentacene thin-film transistors and inverters with cross-linked poly(4-vinylphenol) gate dielectrics
Sang Chul Lim,Seong Hyun Kim,Jae Bon Koo,Jung Hun Lee,Chan Hoe Ku,Yong Suk Yang,Taehyoung Zyung +6 more
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TLDR
In this paper, the effects of hydroxyl groups (OH bonds) on the electrical reliabilities of pentacene organic thin-film transistors (OTFTs) with poly-4-vinylphenol (PVP) gate dielectrics were reported.Abstract:
The authors report the effects of hydroxyl groups (OH bonds) on the electrical reliabilities of pentacene organic thin-film transistors (OTFTs) with poly-4-vinylphenol (PVP) gate dielectrics. PVP gate dielectric films mixed with different concentrations of methylated poly(melamine-co-formaldehyde) (MMF) were fabricated, and experiments on the hysteresis behavior of the OTFT device were conducted. Pentacene TFTs with the PVP (MMF 0wt.%) exhibited a large hysteresis, while in the PVP (MMF 125wt.%), nearly no hysteresis was observed. Large hysteresis observed in OTFT devices was confirmed to be strongly related to the hydroxyl groups existing inside of the polymeric dielectrics and could reduced by the decrease of OH group.read more
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Current versus gate voltage hysteresis in organic field effect transistors
Martin Egginger,Siegfried Bauer,Reinhard Schwödiauer,Helmut Neugebauer,Niyazi Serdar Sariciftci +4 more
TL;DR: In this paper, the authors provide an overview of the physical effects that cause hysteresis and discuss the importance of such effects in OFETs in a comparative manner, in order to provide a comprehensive picture of the hystresis phenomena in organic field effect transistors.
Journal ArticleDOI
Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory
TL;DR: In this paper, a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported.
Journal ArticleDOI
Large-Area MXene Electrode Array for Flexible Electronics.
TL;DR: This study successfully fabricated a large-scale, uniform Ti3C2Tx MXene electrode array on a flexible plastic substrate for application in high-performance OfETs and fabricated MXene-electrode-based complementary logic circuits, such as NOT, NAND, and NOR, were fabricated via integration of p-type and n-type OFETs.
Journal ArticleDOI
Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices
TL;DR: In this article, the effects of the chemical structure and composition of polymer or composite electrets on tuning the memory characteristics of the nonvolatile organic field effect transistor (OFET) memory devices, including surface polarity, π-conjugation length, architecture, donor-acceptor strength, and interface energy barrier, are discussed.
Journal ArticleDOI
Hysteresis mechanisms of pentacene thin-film transistors with polymer/oxide bilayer gate dielectrics
TL;DR: In this article, the electrical stability of organic poly-4-vinyl phenol (PVP)/inorganic oxide bilayer gate dielectrics for lowvoltage pentacene thin-film transistors (TFTs) was studied.
References
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Journal ArticleDOI
High-Resolution Inkjet Printing of All-Polymer Transistor Circuits
Henning Sirringhaus,Takeo Kawase,Richard H. Friend,Tatsuya Shimoda,M. Inbasekaran,Weishi Wu,E. P. Woo +6 more
TL;DR: It is shown that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers, and high mobilities were achieved.
Journal ArticleDOI
Integrated Optoelectronic Devices Based on Conjugated Polymers
TL;DR: An all-polymer semiconductor integrated device is demonstrated with a high-mobility conjugated polymer field-effect transistor driving a polymer light-emitting diode (LED) of similar size, which represents a step toward all- polymer optoelectronic integrated circuits such as active-matrix polymer LED displays.
Journal ArticleDOI
General observation of n-type field-effect behaviour in organic semiconductors
Lay-Lay Chua,Lay-Lay Chua,Jana Zaumseil,Jui Fen Chang,Eric C.W. Ou,Peter K. H. Ho,Peter K. H. Ho,Henning Sirringhaus,Richard H. Friend +8 more
TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Journal ArticleDOI
High-mobility polymer gate dielectric pentacene thin film transistors
TL;DR: In this article, a spin-coated polymer gate dielectric layer was used to obtain a polyvinylphenol-based copolymer-based transistor with a carrier mobility as large as 3 cm2/V's and sub-threshold swing as low as 0.5 V/decade.
Journal ArticleDOI
Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors
TL;DR: In this paper, organic vapor phase deposition was used to grow polycrystalline pentacene channel thin-film transistors, and O2-plasma treated SiO2 was treated with octadecyltrichlorosilane (OTS) prior to Pentacene deposition.