Indirect excitons in van der Waals heterostructures at room temperature
Reads0
Chats0
TLDR
Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems as mentioned in this paper.Abstract:
Indirect excitons (IXs) in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by a high binding energy making them stable at room temperature and giving the opportunity for exploring fundamental phenomena in excitonic systems and developing excitonic devices operational at high temperatures. We present the observation of IXs at room temperature in van der Waals TMD heterostructures based on monolayers of MoS$_2$ separated by atomically thin hexagonal boron nitride. The IXs realized in the TMD heterostructure have lifetimes orders of magnitude longer than lifetimes of direct excitons in single-layer TMD, and their energy is gate controlled.read more
Citations
More filters
Patent
Excitonic device and operating methods thereof
TL;DR: In this article, the authors present an excitonic device including at least one heterostructure comprising or consisting solely of a first two-dimensional material or layer and a second 2D layer.
References
More filters
Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Field-effect tunneling transistor based on vertical graphene heterostructures.
L. Britnell,Roman V. Gorbachev,Rashid Jalil,Branson D. Belle,Fred Schedin,Artem Mishchenko,Thanasis Georgiou,Mikhail I. Katsnelson,Laurence Eaves,Sergey V. Morozov,Nuno M. R. Peres,Nuno M. R. Peres,Jon Leist,Andre K. Geim,K. S. Novoselov,Leonid Ponomarenko +15 more
TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.
Journal ArticleDOI
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2
Alexey Chernikov,Timothy C. Berkelbach,Heather M. Hill,Albert F. Rigosi,Yilei Li,Ozgur Burak Aslan,David R. Reichman,Mark S. Hybertsen,Tony F. Heinz +8 more
TL;DR: Strong but unconventional electron-hole interactions are expected to be ubiquitous in atomically thin materials using a microscopic theory in which the nonlocal nature of the effective dielectric screening modifies the functional form of the Coulomb interaction.
Journal ArticleDOI
Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
Xiaoping Hong,Jonghwan Kim,Su-Fei Shi,Yu Zhang,Chenhao Jin,Yinghui Sun,Sefaattin Tongay,Junqiao Wu,Yanfeng Zhang,Feng Wang +9 more
TL;DR: It is shown that hole transfer from the MoS2 layer to the WS2 layer takes place within 50 fs after optical excitation, a remarkable rate for van der Waals coupled two-dimensional layers, which can enable novel two- dimensional devices for optoelectronics and light harvesting.
Journal ArticleDOI
Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
Pasqual Rivera,John Schaibley,Aaron M. Jones,Jason Ross,Sanfeng Wu,Grant Aivazian,Philip Klement,Kyle L. Seyler,Genevieve Clark,Nirmal Ghimire,Jiaqiang Yan,D. G. Mandrus,Wang Yao,Xiaodong Xu +13 more
TL;DR: This work demonstrates optical pumping of interlayer electric polarization, which may provoke further exploration of inter layer exciton condensation, as well as new applications in two-dimensional lasers, light-emitting diodes and photovoltaic devices.