Indium nitride (InN): A review on growth, characterization, and properties
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TLDR
In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.Abstract:
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of InN films. High quality single crystalline InN film with two-dimensional growth and high growth rate are now routinely obtained. The background carrier concentration and Hall mobility have also improved. Observation of strong photoluminescence near the band edge is reported very recently, leading to conflicts concerning the exact band gap of InN. Attempts have also been made on the deposition of InN based heterostructures for the fabrication of InN based electronic devices. Preliminary evidence of two-dimensional electron gas accumulation in the InN and studies on InN-based field-effect transistor structure are reported. In this article, the work accomplished in the InN research, from its evolution to till now, is reviewed. The In containing alloys or other nitrides (AlGaInN, GaN,AlN) are not discussed here. We mainly concentrate on the growth, characterization, and recent developments in InN research. The most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy, are discussed in detail with their recent progress. Important phenomena in the epitaxialgrowth of InN as well as the problems remaining for future study are also discussed.read more
Citations
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First-principles calculations for defects and impurities: Applications to III-nitrides
TL;DR: In this paper, the authors describe the state-of-the-art computational methodology for calculating the structure and energetics of point defects and impurities in semiconductors and pay particular attention to computational aspects which are unique to defects or impurities, such as how to deal with charge states and how to describe and interpret transition levels.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
Fong Kwong Yam,Zainuriah Hassan +1 more
TL;DR: In this paper, the fundamental properties of InGaN materials, such as optical, structural, and electrical properties, are reviewed, and the erroneous measurements of the indium composition by using X-ray diffraction (XRD) are also described.
Journal ArticleDOI
Structure and electronic properties of InN and In-rich group III-nitride alloys
Wladek Walukiewicz,Joel W. Ager,Kin Man Yu,Zuzanna Liliental-Weber,Junqiao Wu,S. X. Li,S. X. Li,R. E. Jones,R. E. Jones,Jonathan D. Denlinger +9 more
TL;DR: The experimental study of InN and In-rich InGaN by a number of structural, optical and electrical methods is reviewed in this article, where the electron effective mass in InN is interpreted in terms of a non-parabolic conduction band caused by the k · p interaction across the narrow gap.
Journal ArticleDOI
InGaN Solar Cells: Present State of the Art and Important Challenges
TL;DR: A review on the present state of the art of In-based solar cells is presented and the most important challenges toward the high-efficiency N materials are discussed in the context of the recent results.
References
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The effects of oxygen contamination on the properties of reactively sputtered indium nitride films
TL;DR: In this article, it was shown that the oxygen forms an amorphous indium oxynitride that exists in an InN polycrystalline matrix, and that this amorphus decreases the electron mobility of the films.
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Structural properties and Raman modes of zinc blende InN epitaxial layers
A. Tabata,Albertina P. Lima,Lara K. Teles,L. M. R. Scolfaro,J. R. Leite,V. Lemos,B. Schöttker,T. Frey,D. Schikora,Klaus Lischka +9 more
TL;DR: In this article, the x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films were conducted on GaAs(001) substrates using a InAs layer as a buffer.
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Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
TL;DR: In this paper, a new tanden solar cell having an InN top cell is proposed since InN is a binary material having a bandgap of about 1.9 eV suitable for a top cell in a 2-junction tandem cell.
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Optical Properties of InxGa1—xN with Entire Alloy Composition on InN Buffer Layer Grown by RF‐MBE
Masaru Hori,K. Kano,Tomohiro Yamaguchi,Yoshiki Saito,Tsutomu Araki,Yasushi Nanishi,Nobuaki Teraguchi,Akira Suzuki +7 more
TL;DR: In this article, optical properties of In x Ga 1-x N films with x > 0.53 were analyzed and a bowing parameter of 2.3 eV was obtained from the relationship between PL emission energy and alloy composition.
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Strong band edge luminescence from InN films grown on Si substrates by electron cyclotron resonance-assisted molecular beam epitaxy
TL;DR: In this article, strong band edge luminescence at 8.5-200 K from 200-880 nm thick InN films grown on 10 nm thick buffer layers on Si(001) and Si(111) substrates by electron cyclotron resonance-assisted molecular beam epitaxy.