Indium nitride (InN): A review on growth, characterization, and properties
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TLDR
In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.Abstract:
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of InN films. High quality single crystalline InN film with two-dimensional growth and high growth rate are now routinely obtained. The background carrier concentration and Hall mobility have also improved. Observation of strong photoluminescence near the band edge is reported very recently, leading to conflicts concerning the exact band gap of InN. Attempts have also been made on the deposition of InN based heterostructures for the fabrication of InN based electronic devices. Preliminary evidence of two-dimensional electron gas accumulation in the InN and studies on InN-based field-effect transistor structure are reported. In this article, the work accomplished in the InN research, from its evolution to till now, is reviewed. The In containing alloys or other nitrides (AlGaInN, GaN,AlN) are not discussed here. We mainly concentrate on the growth, characterization, and recent developments in InN research. The most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy, are discussed in detail with their recent progress. Important phenomena in the epitaxialgrowth of InN as well as the problems remaining for future study are also discussed.read more
Citations
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Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods
Xian Sun,Desheng Jiang,Wenbao Liu,Jihong Zhu,Hui Wang,Zongshun Liu,Jianjun Zhu,Yutian Wang,Degang Zhao,Shuming Zhang,Liping You,Renmin Ma,Hui Yang +12 more
TL;DR: In this paper, the orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001]-GaN and [1100]-InN parallel to[1100]-GaNs, showing a great difference from the conventional InN growth on (0001) c-plane GaN template.
Journal ArticleDOI
Indium nitride nanotube interaction with different DNA nucleobases: Quantum chemical analysis
TL;DR: In this paper , the energy released upon the DNA nucleobases adsorption on the InNNT shows the order of guanine (G, 1.62 eV) > thymine (T,1.49) > cytosine (C, 1, 45) > adenine (A, 0.82).
Journal ArticleDOI
Properties of Titanium Zirconium Molybdenum Alloy after Exposure to Indium at Elevated Temperatures
TL;DR: In-exposed and unexposed Titanium Zirconium molybdenum (TZM) samples were used for impact fracture toughness testing at temperatures ranging from −196 °C to 800 °C for 14 days as mentioned in this paper .
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
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III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.