Indium nitride (InN): A review on growth, characterization, and properties
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In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.Abstract:
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of InN films. High quality single crystalline InN film with two-dimensional growth and high growth rate are now routinely obtained. The background carrier concentration and Hall mobility have also improved. Observation of strong photoluminescence near the band edge is reported very recently, leading to conflicts concerning the exact band gap of InN. Attempts have also been made on the deposition of InN based heterostructures for the fabrication of InN based electronic devices. Preliminary evidence of two-dimensional electron gas accumulation in the InN and studies on InN-based field-effect transistor structure are reported. In this article, the work accomplished in the InN research, from its evolution to till now, is reviewed. The In containing alloys or other nitrides (AlGaInN, GaN,AlN) are not discussed here. We mainly concentrate on the growth, characterization, and recent developments in InN research. The most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy, are discussed in detail with their recent progress. Important phenomena in the epitaxialgrowth of InN as well as the problems remaining for future study are also discussed.read more
Citations
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Structural and optical characterisation of InN layers grown by MOCVD
P. Singh,Pierre Ruterana,Magali Morales,F. Goubilleau,M. Wojdak,Jean-François Carlin,Marc Ilegems,Daniel Chateigner +7 more
TL;DR: In this article, the indium nitride layers were grown on different types of buffer layers such as Ga polar GaNs, N polar GaN, low temperature AlN and nitrided sapphire.
Journal ArticleDOI
Recent Progress on Piezotronic and Piezo-Phototronic Effects in III-Group Nitride Devices and Applications
TL;DR: In this paper, the authors provide an overview of the emerging fields of piezotronics and piezo-phototronics, covering from the fundamental principles to devices and applications, and provide important insight into the potential applications of GaN based electronic/opto-electronic devices in sensing, active flexible/stretchable electronics/OPtoelectronics, energy harvesting, human-machine interfacing, biomedical diagnosis/therapy, and prosthetics.
Journal ArticleDOI
MOVPE growth of InN with ammonia on sapphire
TL;DR: In this article, the optimal temperature for the nitridation of the sapphire substrate is around 1050 °C and the optimal growth temperature is always very close to the highest possible temperature which is determined by the thermal decomposition of the InN layer.
Journal ArticleDOI
Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactor
Abdul Kadir,Tapas Ganguli,M. R. Gokhale,A.P. Shah,S.S. Chandvankar,Brij M. Arora,Arnab Bhattacharya +6 more
TL;DR: In this article, the authors reported the synthesis of InN via low-pressure metal-organic vapour phase epitaxy (MOVPE) in a close-coupled showerhead reactor system.
Journal ArticleDOI
Compositional modulation in InxGa1-xN: TEM and x-ray studies
Zuzanna Liliental-Weber,D. N. Zakharov,Kin Man Yu,Joel W. Ager,Wladek Walukiewicz,Eugene E. Haller,Hai Lu,William J. Schaff +7 more
TL;DR: Transmission Electron Microscopy (TEM) and X-ray diffraction (XRD) have been used to study compositional modulation in InxGa1 as mentioned in this paper.
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
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III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.