Indium nitride (InN): A review on growth, characterization, and properties
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In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.Abstract:
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of InN films. High quality single crystalline InN film with two-dimensional growth and high growth rate are now routinely obtained. The background carrier concentration and Hall mobility have also improved. Observation of strong photoluminescence near the band edge is reported very recently, leading to conflicts concerning the exact band gap of InN. Attempts have also been made on the deposition of InN based heterostructures for the fabrication of InN based electronic devices. Preliminary evidence of two-dimensional electron gas accumulation in the InN and studies on InN-based field-effect transistor structure are reported. In this article, the work accomplished in the InN research, from its evolution to till now, is reviewed. The In containing alloys or other nitrides (AlGaInN, GaN,AlN) are not discussed here. We mainly concentrate on the growth, characterization, and recent developments in InN research. The most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy, are discussed in detail with their recent progress. Important phenomena in the epitaxialgrowth of InN as well as the problems remaining for future study are also discussed.read more
Citations
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Journal ArticleDOI
Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition
Hui Wang,Yong Huang,Qian Sun,Jun Chen,Jinli Zhu,Li Wang,Yanqin Wang,H. W. Yang,M.F. Wu,Y.H. Qu,Deli Jiang +10 more
TL;DR: In this paper, the authors combined backscattering and channeling with X-ray diffraction to study the depth dependence of crystalline quality in InN layers grown by metalorganic chemical vapor deposition on sapphire substrate.
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Structural Investigation of Cubic-Phase InN on GaAs (001) Grown by MBE under In- and N-Rich Growth Conditions
TL;DR: In this paper, the effect of the In and N-rich growth conditions on the structural modification of cubic-phase InN (c-InN) films grown on GaAs (001) substrates by rf-plasma assisted molecular beam epitaxy (RF-MBE).
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Coherent and dislocated three-dimensional islands of In x Ga 1 − x N self-assembled on GaN(0001) during molecular-beam epitaxy
TL;DR: In this paper, the Stranski-Krastanov growth of the alloy is followed, where the newly nucleated three-dimensional islands are initially coherent to the underlying GaN and the wetting layer, but then become dislocated when grown bigger than about 20 nm in the lateral dimension.
Journal ArticleDOI
Relative humidity sensing properties of indium nitride compound with oxygen doping on silicon and AAO substrates
TL;DR: In this article, the authors used a DC sputtering system to grow indium nitride compound doped oxygen sensing film, which could be applied in the fabrication of relative humidity sensor.
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First principles calculations of structural, electronic and optical properties of InN compound
TL;DR: In this paper, the authors carried out ab initio calculations of structural, electronic and optical properties of Indium nitride (InN) compound in both zinc blende and wurtzite phases, using the full-potential linearized augmented plane wave method (FP-LAPW), within the framework of density functional theory (DFT).
References
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GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
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Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
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III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.