Indium nitride (InN): A review on growth, characterization, and properties
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In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.Abstract:
During the last few years the interest in the indium nitride (InN) semiconductor has been remarkable. There have been significant improvements in the growth of InN films. High quality single crystalline InN film with two-dimensional growth and high growth rate are now routinely obtained. The background carrier concentration and Hall mobility have also improved. Observation of strong photoluminescence near the band edge is reported very recently, leading to conflicts concerning the exact band gap of InN. Attempts have also been made on the deposition of InN based heterostructures for the fabrication of InN based electronic devices. Preliminary evidence of two-dimensional electron gas accumulation in the InN and studies on InN-based field-effect transistor structure are reported. In this article, the work accomplished in the InN research, from its evolution to till now, is reviewed. The In containing alloys or other nitrides (AlGaInN, GaN,AlN) are not discussed here. We mainly concentrate on the growth, characterization, and recent developments in InN research. The most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy, are discussed in detail with their recent progress. Important phenomena in the epitaxialgrowth of InN as well as the problems remaining for future study are also discussed.read more
Citations
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Journal ArticleDOI
Structural and Optical Characterization of InGaN Layers Grown by MOMBE
TL;DR: In this paper, the InGaN ternary films were grown by MOMBE, with the In fraction varying from 6% to 100% using XRD and TEM to determine the crystalline state, the nature of defects inside the layers and their distribution as related to the In concentration.
Journal ArticleDOI
Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method
TL;DR: In this paper, the effects of the group V/III ratio and different GaN inter-layers on the crystal quality of the InN layers were systemically investigated, and the results showed that InN layer grown by using HVPE on GaN intra-layer/sapphire (0001) substrate structures fabricated by using MOCVD have a high crystal quality and a reduced Raman value, which agrees well with the results of the XRD analysis.
Journal ArticleDOI
Controlled growth and characterization of non-tapered InN nanowires on Si(111) substrates by molecular beam epitaxy
TL;DR: In this article, a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions was performed.
Proceedings ArticleDOI
InN-on-Si heteroepitaxy: growth, optical properties, and applications
TL;DR: In this article, the authors showed that high-quality InN/AlN heterostructures can be formed on Si(111) due to the existence of "magic" ratios between the lattice constants of comprising material pairs: 2:1 (Si:Si 3 N 4 ), 5:4 (AlN/Si), and 8:9 (InN:AlN).
Book ChapterDOI
Low‐Temperature Grown INN Films Based on Sapphire Substrate with ECR‐Plasma Enhanced MOCVD
Ju Zhenhe,Li Shi,Zheng Hong,Zhang Dong,Zhao Yan,Li Yucai,Miao Lihua,Wang Gang,Zhang Xiao-hui,Li Shuangmei,Qin Fuwen +10 more
TL;DR: In this paper, the influence of deposition temperature on the structural, electrical and morphological properties of polycrystalline InN films is systematically investigated by x-ray diffraction analysis (XRD), Hall Effect measurement (HL5500) and atomic force microscopy (AFM).
References
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Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
Unusual properties of the fundamental band gap of InN
Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Hai Lu,William J. Schaff,Yoshiki Saito,Yasushi Nanishi +8 more
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
Journal ArticleDOI
III–nitrides: Growth, characterization, and properties
TL;DR: In this article, the splitting of the valence band by crystal field and spin-orbit interaction has been calculated and measured, and the measured values agree with the calculated values and the effects of strain on the splitting and optical properties have been studied in detail.