Journal ArticleDOI
Industrially Feasible Rear Passivation and Contacting Scheme for High-Efficiency n-Type Solar Cells Yielding a $V_{\rm oc}$ of 700 mV
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TLDR
In this paper, a rear passivation scheme based on doped amorphous silicon carbide was investigated, which results in excellent surface passivation and, at the same time, acts as a doping source.Abstract:
n-Type solar cells with passivated rear surface and point contacts have been proven to have an enormous efficiency potential. However, an industrially feasible process for the realization of the passivated locally contacted rear side of this solar cell type is still missing. Therefore, a rear passivation scheme based on doped amorphous silicon carbide was investigated. The newly developed PassDop layer results in excellent surface passivation and, at the same time, acts as a doping source. After the PECVD of the PassDop layer, contact points are locally opened by a laser pulse, and simultaneously, a local back surface field is formed using the phosphorus contained in the layer. In the last step, the rear side is contacted by the evaporation of aluminum. Due to the very effective passivation of the rear side by the doped passivation layer as well as the excellent contact formation by the laser process, the best cell (aperture area of 4 cm2) exhibits an open-circuit voltage of 701 mV and a fill factor of 80.1%, resulting in a confirmed solar cell efficiency of 22.4%.read more
Citations
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Journal ArticleDOI
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
TL;DR: In this paper, aluminum oxide (Al2O3) nanolayers synthesized by atomic layer deposition (ALD) have been used for the passivation of p-and n-type crystalline Si (c-Si) surfaces.
Journal ArticleDOI
Black silicon: fabrication methods, properties and solar energy applications
Xiaogang Liu,Xiaogang Liu,Paul R. Coxon,Marius Peters,Bram Hoex,Jacqueline M. Cole,Jacqueline M. Cole,Derek J. Fray +7 more
TL;DR: In this article, the use of black silicon (BSi) as an anti-reflection coating in solar cells is examined and appraised, based upon strategies towards higher efficiency renewable solar energy modules.
Journal ArticleDOI
Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing
TL;DR: Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures, which can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD has attracted great interest in academic and industrial research in recent years as discussed by the authors.
Journal ArticleDOI
Thermophotovoltaics on the move to applications
TL;DR: In this paper, thermal photovoltaics (TPV) was intensively investigated as a technology for heat/electricity co-generation in the last decade of the 20th century.
Journal ArticleDOI
A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies
TL;DR: In this paper, the rapid progress in the development of inorganic and organic solar cells (SCs) such as silicon, perovskite, III-V, quantum dot, dye sensitized, flexible SCs, thin film SCs and tandem SCs are reviewed.
References
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TL;DR: In this paper, a simple method for implementing the steady-state photoconductance technique for determining the minority-carrier lifetime of semiconductor materials is presented, using a contactless instrument.
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Daniel Macdonald,L. J. Geerligs +1 more
TL;DR: In this paper, the Australian Research Council and The Netherlands Agency for Energy and the Environment (AEDC) have supported the work of the authors, which has been supported by the AEDC and the Netherlands Environment Agency.
Journal ArticleDOI
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
Bram Hoex,Jan Schmidt,Robert Bock,Pietro P. Altermatt,van de Mcm Richard Sanden,Wmm Erwin Kessels +5 more
TL;DR: In this article, it was demonstrated that Al2O3 provides an excellent level of surface passivation on highly B-doped c-Si with doping concentrations around 1019cm−3.
Journal ArticleDOI
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
Jan Benick,Bram Hoex,M.C.M. van de Sanden,Wilhelmus Mathijs Marie Kessels,O. Schultz,Stefan W. Glunz +5 more
TL;DR: In this paper, negative charge dielectric Al2O3 was applied as surface passivation layer on high-efficiency n-type silicon solar cells, achieving a confirmed conversion efficiency of 23.2% on B-doped emitters.