Journal ArticleDOI
Intergrain magnetoresistance up to 50 T in the half-metallic(Ba0.8Sr0.2)2FeMoO6double perovskite: Spin-glass behavior of the grain boundary
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This article is published in Physical Review B.The article was published on 2005-03-18. It has received 73 citations till now. The article focuses on the topics: Colossal magnetoresistance & Spin glass.read more
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Double perovskites with ferromagnetism above room temperature
TL;DR: In this article, the structural, magnetic and transport properties of double perovskites with ferromagnetism above room temperature are discussed, and the impact of these materials for spin electronics in the light of their high spin polarization at the Fermi level and metallicity.
Journal ArticleDOI
Spin-dependent tunnelling in magnetite nanoparticles
Grant V. M. Williams,Tushara Prakash,Tushara Prakash,John Kennedy,John Kennedy,Shen V. Chong,Sergey Rubanov +6 more
TL;DR: In this article, a co-precipitation method was used to make Fe3O4 nanoparticles with an average size of 13.5nm and a magnetoresistance of up to −6.5% at 8'T and 300'K.
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High spin-dependent tunneling magnetoresistance in magnetite powders made by arc-discharge
TL;DR: In this paper, the successful synthesis of ferrimagnetic magnetite powders made using an arc-discharge method in a partial oxygen atmosphere was reported, and X-ray and electron diffraction measurements showed that the powders also contained some antiferromagnetic hematite and a small amount of FeO and Fe has not oxidized.
Journal ArticleDOI
Observation of magnetism, low resistivity, and magnetoresistance in the near-surface region of Gd implanted ZnO
TL;DR: Ferromagnetic order is observed in Gd ion implanted ZnO crystals after annealing at 650 °C in a vacuum and it is intrinsic and extends to depths of up to 40 nm as discussed by the authors.
Journal ArticleDOI
Enhanced room temperature magnetoresistance and spin injection from metallic cobalt in Co/ZnO and Co/ZnAlO films
Zhi-Yong Quan,Zhi-Yong Quan,Xian-Peng Zhang,Wei Liu,Xiaoli Li,Xiaoli Li,Kiri Addison,Kiri Addison,Gillian A. Gehring,Xiaohong Xu +9 more
TL;DR: Large room temperature negative tunneling magnetoresistance was observed in the films and this enhancement of the tunneling spin polarization has been ascribed to the Tunneling through an interfacial magnetic semiconductor, which causes the robust spin injection from cobalt metal into the semiconductors at room temperature resulting from the spin filter effect of the interfacial magnets.
References
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Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
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Room-temperature magnetoresistance in an oxide material with an ordered double-perovskite structure
TL;DR: In this paper, an ordered double perovskite (Sr2FeMoO) was shown to exhibit intrinsic tunnelling-type magnetoresistance at room temperature.
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Spin-Polarized Intergrain Tunneling in La 2/3 Sr 1/3 MnO 3
TL;DR: In this paper, the magnetoresistance and the field dependent magnetization have been systematically examined in the low temperature ferromagnetic metallic state of single crystal and polycrystalline.
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Conductance and exchange coupling of two ferromagnets separated by a tunneling barrier.
TL;DR: In this article, a theory is given for three closely related effects involving a nonmagnetic electron-tunneling barrier separating two ferromagnetic conductors, and the theory predicts that the valve effect is weak and that the coupling is antiferromagnetic (Jl0).
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Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions
José María de Teresa,Agnès Barthélémy,Albert Fert,Jean Pierre Contour,François Montaigne,Pierre Seneor +5 more
TL;DR: The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported and the results are ascribed to bonding effects at the transition metal-barrier interface.