Journal ArticleDOI
Investigation of CSAR 62, a new resist for electron beam lithography
Stephen Thoms,Douglas Macintyre +1 more
TLDR
CSAR 62 as discussed by the authors is a new positive tone electron beam resist designed to have similar performance to ZEP520A in resolution, speed, and etch resistance, which is used to carry out high resolution electron beam lithography and as a mask for reactive ion etching on dielectrics, gallium arsenide, and silicon substrates coated with a 160 nm film of aluminum.Abstract:
CSAR 62 is a new positive tone electron beam resist designed to have similar performance to ZEP520A in resolution, speed, and etch resistance. In this paper, the authors have used the resist to carry out high resolution electron beam lithography and as a mask for reactive ion etching on dielectrics, gallium arsenide, and silicon substrates coated with a 160 nm film of aluminum. Comparisons have been made between the results obtained using CSAR 62, ZEP520A, and polymethylmethacrylate. The authors conclude that CSAR 62 does demonstrate similar resolution, sensitivity, and etch resistance as ZEP520A but also gives rise to substantial resist residuals after development. These are almost entirely eliminated by using an alternative developer.read more
Citations
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Journal ArticleDOI
New Generation Electron Beam Resists: A Review
Anushka S. Gangnaik,Anushka S. Gangnaik,Yordan M. Georgiev,Yordan M. Georgiev,Justin D. Holmes,Justin D. Holmes +5 more
TL;DR: In this paper, a review article addresses the recent advancements made in electron beam lithography (EBL) resists technology and describes the different lithography processes briefly and then progresses on to the parameters affecting the EBL fabric.
Journal ArticleDOI
Thermal reflow of polymers for innovative and smart 3D structures: a review
TL;DR: In this paper, a review on advanced lithographic methods used to create 3D topographies is presented, with the principal capabilities of grayscale electron beam lithography and multi-photon lithography for initial patterning.
Journal ArticleDOI
Optimized graphene electrodes for contacting graphene nanoribbons
Oliver Braun,Oliver Braun,Jan Overbeck,Jan Overbeck,Maria El Abbassi,Silvan Käser,Silvan Käser,Roman Furrer,Antonis Olziersky,Alexander Flasby,Gabriela Borin Barin,Qiang Sun,Rimah Darawish,Klaus Müllen,Pascal Ruffieux,Roman Fasel,Ivan Shorubalko,Mickael L. Perrin,Michel Calame +18 more
TL;DR: In this paper, the authors report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field effect transistor geometry using electron beam lithography-defined graphene electrodes.
Journal ArticleDOI
Single-electron devices in silicon
TL;DR: In this paper, the authors outline the recent progress in the field of single-electron devices for charge sensing and metrological applications, and illustrate the gap between large-scale commercial fabrication and research prototypes as well as technologies that could close this gap.
Journal ArticleDOI
Organotin in Nonchemically Amplified Polymeric Hybrid Resist Imparts Better Resolution with Sensitivity for Next-Generation Lithography
TL;DR: In this paper, the need for a next-generation technology node in the area of integrated circuits (ICs), improvement in the properties of resist materials, particularly sensitivity (ED), resolution, and good etc.
References
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Journal ArticleDOI
Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520
TL;DR: In this article, the resolution of the positive electron-beam (E-beam) resist ZEP-520 was evaluated using finely focused E-beam exposure for the application of quantum wire fabrication in a large area.
Journal ArticleDOI
Challenges in 1 Teradot∕in.2 dot patterning using electron beam lithography for bit-patterned media
XiaoMin Yang,Shuaigang Xiao,Wei Wu,Yuan Xu,Keith Mountfield,Robert Earl Rottmayer,Kim Yang Lee,David M.T. Kuo,Dieter Weller +8 more
TL;DR: In this article, the authors show the results of sub-25 nm pitch (1Tdots∕in) patterning from both a simulation and experimental perspective, and show that the energy contrast between the exposed and unexposed areas goes down quickly as the pitch size gets smaller and smaller, making it more difficult for image formation of high-resolution dot patterning.
Journal ArticleDOI
Why optical lithography will live forever
TL;DR: In this paper, the authors consider limitations of resolution for production lithography, both the resolution limits of the exposure tool itself and the resolution limit of the resist process, and the most important considerations for production processes are the tradeoff between resist process sensitivity and resolution.
Journal ArticleDOI
Resist residues and transistor gate fabrication
TL;DR: In this article, the formation and removal of resist residues with the main objective to improve the reliability of transistor gate fabrication is investigated, and the residual resist layers in polymethyl methacrylate (PMMA) are observed.
Journal ArticleDOI
Extreme ultraviolet lithography’s path to manufacturing
TL;DR: In this article, the origins of extreme ultraviolet (EUV) lithography and its progress toward readiness for manufacturing are recounted and additional cycles of learning, as obtained from pilot line operation, will greatly accelerate the maturation of EUV lithography.
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