Journal ArticleDOI
Investigation of the oxidation kinetics of CoSi2 on (111)Si by transmission electron microscopy
G. J. Huang,L. J. Chen +1 more
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In this paper, the authors applied transmission electron microscopy to study the oxidation kinetics of CoSi2 on silicon for both dry and wet oxidation, and determined the activation energies of oxidation in the temperature and time regime where the islanding of coSi2 does not occur.Abstract:
Transmission electron microscopy has been applied to study oxidation kinetics of CoSi2 on silicon for both dry and wet oxidation. Care was taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of CoSi2 does not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.91 and 2.01 eV (±0.1 eV), respectively. For wet oxidation, activation energies for parabolic and linear growth were found to be 1.75 and 1.68 eV (±0.1 eV), respectively. The activation energy of the parabolic rate constant is substantially different from those obtained previously. The difference is attributed to the occurrence of islanding during oxidation in the previous study. A comparison of oxidation kinetics of CoSi2, NiSi2, TiSi2 on silicon with pure silicon substrates indicated that the oxidation kinetics are practically the same for CoSi2 and NiSi2 in the parabolic growth regime, but substantially different from those of TiSi2 on silicon a...read more
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Journal ArticleDOI
Silicides and ohmic contacts
Jeffrey P. Gambino,E.G. Colgan +1 more
TL;DR: An overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-Si contacts, metal and silicide deposition techniques, metal reactions, silicide patterning processes, and device degradation due to silicides, is given in this article.
Journal ArticleDOI
Tellurite glasses. Part 1. Elastic properties
TL;DR: In this article, the second and third order elastic constants of tellurite glass at room temperature have been derived from the longitudinal and shear sound velocities and density of the glass.
Journal ArticleDOI
Polycrystalline silicon/CoSi2 Schottky diode with integrated SiO2 antifuse: a nonvolatile memory cell
TL;DR: In this paper, a Schottky diode consisting of doped polycrystalline silicon (polysilicon) and CoSi2 films is described, which can function as a nonvolatile one-time programmable memory cell.
Book ChapterDOI
Introduction to Tellurite Glasses
TL;DR: In this article, the authors introduce tellurite glasses as some smart materials because world has entered the Glass Age and also it contains some unique physical properties, international attention, recent processing, properties and applications of tellurate glasses.
Journal ArticleDOI
Oxygen and the thermal stability of thin CoSi2 layers
TL;DR: In this article, the thermal stability of thin CoSi2 layers was demonstrated to improve with the use of oxygen-containing annealing ambients, and the beneficial effect of air exposure and wet etches to the integrity of thin SiO2 layers is also shown.
References
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Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Journal ArticleDOI
Selective growth of metal‐rich silicide of near‐noble metals
TL;DR: In this paper, it has been shown that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
Journal ArticleDOI
1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
B.L. Crowder,S. Zirinsky +1 more
TL;DR: An alternative approach which combines a doped polycrystalline silicon layer with a high-conductivity metal silicide such as WSi2(polycide) is described, which is demonstrated to provide at least an order of magnitude improvement in interconnection resistance relative to polycrystaline silicon.
Journal ArticleDOI
Epitaxial growth of transition-metal silicides on silicon
L. J. Chen,King-Ning Tu +1 more
TL;DR: In this article, the formation and characterization of epitaxial silicides by different techniques are described and several recent developments in the growth of transition-metal silicides on silicon are described.
Journal ArticleDOI
Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms
TL;DR: In this article, a new understanding of the growth-rate enhancement in the early stages of silicon oxidation in dry oxygen is introduced, and the physical mechanisms previously proposed to explain the rate enhancement are discussed.
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