Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TLDR
In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.Abstract:
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.read more
Citations
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Patent
Solid-state lamps utilizing photoluminescence wavelength conversion components
TL;DR: The photoluminescence wavelength conversion component comprises a hollow cylindrical tube having a given bore of diameter and an axial length, and can be homogeneously distributed throughout the volume of the component during manufacture as mentioned in this paper.
Book ChapterDOI
One-Dimensional SiC Nanostructures: Synthesis and Properties
TL;DR: In this paper, the authors reviewed the recent progress on one-dimensional SiC nanostructures in both experimental and theoretical level, including synthesis methods and some properties (field emission, optical, electronic transport, mechanical, photocatalyst, and hydrogen storage).
Journal ArticleDOI
Nanoscale GaN Epilayer Grown by Atomic Layer Annealing and Epitaxy at Low Temperature
Wei-Hao Lee,Yu-Tung Yin,Po-Hsien Cheng,Jing-Jong Shyue,Makoto Shiojiri,Hsin-Chih Lin,Miin-Jang Chen +6 more
TL;DR: In this paper, a heteroepitaxy with large thermal and lattice mismatch between the semiconductor and substrate is considered for high-quality epitaxial growth, and high growth temperatures (>1000 °C) a...
Patent
Wavelength conversion component with improved protective characteristics for remote wavelength conversion
TL;DR: In this paper, a wavelength conversion layer is sandwiched between two light transmissive hermetic substrates to protect the layer from exposure to external environmental conditions, where a sealant material disposed around an outer edge of the sandwich structure is used to hermetically seal the outer edge.
Journal ArticleDOI
Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth
TL;DR: A gallium nitride (GaN) epitaxial layer was grown by metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates with aluminum nitride buffer layers at various thicknesses as mentioned in this paper.
References
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Journal ArticleDOI
General Relationship for the Thermal Oxidation of Silicon
Bruce E. Deal,A.S. Grove +1 more
TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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Journal ArticleDOI
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
PatentDOI
Blue-green laser diode
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Journal ArticleDOI
The preparation and properties of vapor- deposited single-crystalline GaN
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TL;DR: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc as mentioned in this paper, were tested for testing the properties of single crystals.