Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TLDR
In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.Abstract:
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.read more
Citations
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Journal ArticleDOI
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
First-principles calculations for point defects in solids
Christoph Freysoldt,Blazej Grabowski,Tilmann Hickel,Jörg Neugebauer,Georg Kresse,Anderson Janotti,Chris G. Van de Walle +6 more
TL;DR: The theoretical modeling of point defects in crystalline materials by means of electronic-structure calculations, with an emphasis on approaches based on density functional theory (DFT), is reviewed in this paper.
References
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Journal ArticleDOI
Low‐Temperature Growth of β ‐ SiC on Si by Gas‐Source MBE
T. Sugii,T. Aoyama,Takashi Ito +2 more
Journal ArticleDOI
High-transconductance beta -SiC buried-gate JFETs
TL;DR: In this paper, an improved performance buried-gate SiC junction field effect transistor (JFET) has been fabricated and evaluated, which uses an n-type beta -SiC film epitaxially grown by chemical vapor deposition on the Si(0001) face of a p-type 6H alpha-SiC single crystal.
Journal ArticleDOI
ion-implanted junctions and conducting layers in SiC
O. J. Marsh,H. L. Dunlap +1 more
TL;DR: In this article, the van der Pauw-Hall effect and sheet resistivity measurements were carried out for anneal temperatures ranging from 1100 to 1800°C, and the p-n junction formed by the donor-implanted layers were evaluated as a function of annealing temperature.
Journal ArticleDOI
Silicon carbide blue-emitting diodes produced by liquid-phase epitaxy
W. v. Münch,W. Kürzinger +1 more
TL;DR: In this article, the emission spectra and efficiency data for two versions of the LPE process are presented for diodes with different impurity levels, and a brightness of 15 ftl/A/cm 2 is obtained.
Journal ArticleDOI
Solution grown SiC p-n junctions
R W Brander,R P Sutton +1 more
TL;DR: In this paper, the epitaxial growth of silicon carbide on α-SiC substrates has been carried out at 1650°C in carbon-saturated silicon solutions and the quality of growth is strongly dependent on the inclination of the substrate in the melt, an angle of 40° to the horizontal resulting in the growth of uniform layers of the same polytype as the substrate.