Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TLDR
In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.Abstract:
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device applications. The merits of each contender for high‐temperature electronics and short‐wavelength optical applications are compared. The outstanding thermal and chemical stability of SiC and GaN should enable them to operate at high temperatures and in hostile environments, and also make them attractive for high‐power operation. The present advanced stage of development of SiC substrates and metal‐oxide‐semiconductor technology makes SiC the leading contender for high‐temperature and high‐power applications if ohmic contacts and interface‐state densities can be further improved. GaN, despite fundamentally superior electronic properties and better ohmic contact resistances, must overcome the lack of an ideal substrate material and a relatively advanced SiC infrastructure in order to compete in electronics applications. Prototype transistors have been fabricated from both SiC and GaN, and the microwave characteristics and high‐temperature performance of SiC transistors have been studied. For optical emitters and detectors, ZnSe, SiC, and GaN all have demonstrated operation in the green, blue, or ultraviolet (UV) spectra. Blue SiC light‐emitting diodes (LEDs) have been on the market for several years, joined recently by UV and blue GaN‐based LEDs. These products should find wide use in full color display and other technologies. Promising prototype UV photodetectors have been fabricated from both SiC and GaN. In laser development, ZnSe leads the way with more sophisticated designs having further improved performance being rapidly demonstrated. If the low damage threshold of ZnSe continues to limit practical laser applications, GaN appears poised to become the semiconductor of choice for short‐wavelength lasers in optical memory and other applications. For further development of these materials to be realized, doping densities (especially p type) and ohmic contact technologies have to be improved. Economies of scale need to be realized through the development of larger SiC substrates. Improved substrate materials, ideally GaN itself, need to be aggressively pursued to further develop the GaN‐based material system and enable the fabrication of lasers. ZnSe material quality is already outstanding and now researchers must focus their attention on addressing the short lifetimes of ZnSe‐based lasers to determine whether the material is sufficiently durable for practical laser applications. The problems related to these three wide‐band‐gap semiconductor systems have moved away from materials science toward the device arena, where their technological development can rapidly be brought to maturity.read more
Citations
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Journal ArticleDOI
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI
A comprehensive review of zno materials and devices
Ümit Özgür,Ya. I. Alivov,C. Liu,A. Teke,Michael A. Reshchikov,Seydi Doğan,Vitaliy Avrutin,Sang-Jun Cho,Hadis Morkoç +8 more
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Journal ArticleDOI
Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
Journal ArticleDOI
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes.
Shuji Nakamura,Masayuki Senoh,Shin–ichi Nagahama,Naruhito Iwasa,Takao Yamada,Toshio Matsushita,Hiroyuki Kiyoku,Yasunobu Sugimoto +7 more
TL;DR: In this article, the InGaN multi-quantum-well (MQW) structure was used for laser diodes, which produced 215mW at a forward current of 2.3
Journal ArticleDOI
First-principles calculations for point defects in solids
Christoph Freysoldt,Blazej Grabowski,Tilmann Hickel,Jörg Neugebauer,Georg Kresse,Anderson Janotti,Chris G. Van de Walle +6 more
TL;DR: The theoretical modeling of point defects in crystalline materials by means of electronic-structure calculations, with an emphasis on approaches based on density functional theory (DFT), is reviewed in this paper.
References
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Journal ArticleDOI
ZnSe light‐emitting diodes
TL;DR: In this paper, the successful fabrication of ZnSe pn junction light-emitting diodes in which Li and Cl are used as p-type and n-type dopants, respectively, was reported.
Journal ArticleDOI
Ohmic contacts to p-type ZnSe using ZnTe/ZnSe multiquantum wells
TL;DR: In this paper, a specific contact resistance as low as 5.0*10/sup -2/ Omega cm/sup 2/ has been achieved for N-doped ZnSe with a hole concentration of 7.0 * 10/sup 16/ cm/SUP -3/.
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Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy
TL;DR: In this paper, the dry etching characteristics of thin film InN, AlN, and GaN epitaxial layers deposited using metalorganic group III sources (trimethylindium, trimethylamine alane, and triethylgallium) and electron cyclotron resonance (ECR) plasma excited atomic nitrogen in a metal organic molecular beam epitaxy (MO‐MBE) chamber have been examined using CCl2F2/Ar, BCl3/Ar and CH4/H 2/Ar discharges.
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Effect of aln buffer layer on algan/α-al2o3heteroepitaxial growth by metalorganic vapor phase epitaxy
TL;DR: In this paper, a phenomenological model is proposed to explain the effect of the buffer layer on the surface morphology and the crystalline quality of AlGaN films, which can explain the difference in surface morphology between different buffer layers.
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Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor deposition
TL;DR: In this paper, the surface morphology of cubic SiC single crystals grown on Si(100) oriented substrate was observed and texture-like morphology was observed, which originated from antiphase domains (APD).