Journal ArticleDOI
Leakage current mechanisms in top-gate nanocrystalline silicon thin film transistors
TLDR
In this article, the leakage current in the top-gate nanocrystalline silicon (nc-Si:H) thin film transistors was examined at various temperatures in an attempt to deduce the underlying off-state conduction mechanisms.Abstract:
The leakage current in the top-gate nanocrystalline silicon (nc-Si:H) thin film transistors was examined at various temperatures in an attempt to deduce the underlying off-state conduction mechanisms. Under high gate bias, the leakage current can be attributed to the thermal emission of trapped carriers at the midgap grain boundary states at low drain bias, while the behavior is reminiscent of the Poole–Frenkel emission in the drain depletion region at high drain bias. In contrast, Ohmic conduction through the bulk nc-Si:H channel layer seems to be the dominant mechanism of the leakage current under low gate bias.read more
Citations
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References
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Journal ArticleDOI
XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's
TL;DR: In this article, a 500-1000-A-thick a-Si:H was successfully crystallized by XeCl excimer laser (308nm) annealing without heating a glass substrate.
Journal ArticleDOI
Electronic skin: architecture and components
Sigurd Wagner,Stéphanie P. Lacour,Joyelle Jones,Pai Hui I. Hsu,James C. Sturm,Teng Li,Zhigang Suo +6 more
TL;DR: This work focuses on recent advances in stretchable thin-film conductors, by covering their construction, evaluation, and laboratory and theoretical analysis.
Journal ArticleDOI
Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
J. Batey,E. Tierney +1 more
TL;DR: In this paper, the authors used very low flow rates of reactive gases, together with a much higher flow of inert carrier gas to ensure uniformity and reproducible properties of silicon dioxide films.
Journal ArticleDOI
Development and electrical properties of undoped polycrystalline silicon thin-film transistors
R.E. Proano,R.S. Misage,D.G. Ast +2 more
TL;DR: In this paper, the conduction mechanism and the origins of leakage currents in undoped channel polycrystalline silicon thin-film transistors fabricated under a variety of processing conditions were investigated.
Journal ArticleDOI
High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition
TL;DR: In this article, hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by using 13.56MHz plasma-enhanced chemical vapor deposition at 260°C by means of a silane (SiH4) plasma heavily diluted with hydrogen (H2).