Journal ArticleDOI
Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN
Martin Albrecht,Silke Christiansen,Giancarlo Salviati,C. Zanotti-Fregonara,Y. T. Rebane,Y. G. Shreter,M Mayer,A Pelzmann,Markus Kamp,Karl Joachim Ebeling,Michael D. Bremser,Robert F. Davis,Horst P. Strunk +12 more
TLDR
In this article, an additional UV line at 364nm/3.4eV can be connected to the occurrence of stacking faults by a model based on the concept of excitons bound to stacking faults that form a quantum well of cubic material in the wurtzite lattice of the layer material.Citations
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Journal ArticleDOI
Luminescence properties of defects in GaN
TL;DR: In this paper, the structural and point defects caused by lattice and stacking mismatch with substrates are discussed. But even the best of the three binaries, InN, AIN and AIN as well as their ternary compounds, contain many structural defects, and these defects notably affect the electrical and optical properties of the host material.
Journal ArticleDOI
Temperature quenching of photoluminescence intensities in undoped and doped gan
Mathieu Leroux,Nicolas Grandjean,Bernard Beaumont,Gilles Nataf,Fabrice Semond,Jean Massies,Pierre Gibart +6 more
TL;DR: In this paper, the temperature behavior of various photoluminescence (PL) transitions observed in undoped, n-and p-doped GaN in the 9-300 K range is discussed.
Journal ArticleDOI
Luminescence associated with stacking faults in GaN
TL;DR: In this article, a comprehensive picture of the luminescence properties related to stacking faults in GaN is presented, and the emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed.
Journal ArticleDOI
Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN
Giancarlo Salviati,Martin Albrecht,C. Zanotti-Fregonara,Nicola Armani,M Mayer,Y. G. Shreter,M. Guzzi,Yu. V. Melnik,Konstantin Vassilevski,V. A. Dmitriev,Horst P. Strunk +10 more
TL;DR: In this article, defect related states and excitonic transitions in epitaxial GaN have been studied by combining cathodoluminescence and transmission electron microscopy, and the structural origin of these defects in terms of formation of VGa−SiGa and VGa-ON complexes were discussed.
Journal ArticleDOI
Luminescence associated with stacking faults in GaN
TL;DR: In this article, a comprehensive picture of the luminescence properties related to stacking faults in GaN is presented, and the emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed.
References
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Journal ArticleDOI
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Journal ArticleDOI
GaN, AlN, and InN: A review
S. Strite,Hadis Morkoç +1 more
TL;DR: The status of research on both wurtzite and zinc-blende GaN, AlN, and InN and their alloys including exciting recent results is reviewed in this paper.
Journal ArticleDOI
Fundamental energy gap of GaN from photoluminescence excitation spectra
TL;DR: In this article, the results of PLE measurements are combined with data on reflection and luminescence in the intrinsic region to determine the positions of $A, $B, and $C$-exciton ground-state transition energies and the lowest band gap.
Journal ArticleDOI
Infrared Lattice Vibrations and Free-Electron Dispersion in GaN
A. S. Barker,Marc Ilegems +1 more
TL;DR: In this paper, the free-carrier effects in GaN were derived by studying the normal-incidence reflectance as a function of carrier concentration in the 2.17-to 1.20-folding range.
Journal ArticleDOI
Spatial distribution of the luminescence in GaN thin films
TL;DR: The spatial dependence of the luminescence intensities at the band edge (364 nm) and at the defect-band (centered at 560 nm) regions for epitaxial GaN films have been studied using cathodoluminescence microscopy at room temperature.
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