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Journal ArticleDOI

Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc Oxide

R. Dingle
- 15 Sep 1969 - 
- Vol. 23, Iss: 11, pp 579-581
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TLDR
In this paper, the role of deep acceptor states in electronic processes in covalent solids was investigated and it was found that the transition is an optical charge transfer between a highly shielded localized level of the copper impurity and a level which is strongly perturbed by the valence-band states of the crystal.
Abstract
Luminescent transitions at divalent copper impurities in ZnO give rise to a close-spaced, no-phonon doublet at \ensuremath{\sim}2.8590 eV, as well as a broad multiphonon side band. The transition is found to be an optical charge transfer between a highly shielded localized level of the copper impurity and a level which is strongly perturbed by the valence-band states of the crystal. The analysis provides information about the role of deep acceptor states in electronic processes in covalent solids.

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A comprehensive review of zno materials and devices

TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
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TL;DR: In this article, the authors explore the interrelationships between the green 510 nm emission, the free-carrier concentration, and the paramagnetic oxygen vacancy density in commercial ZnO phosphors by combining photoluminescence, optical absorption, and electron paramagnetic resonance spectroscopies.
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