Proceedings ArticleDOI
Manufacture of SiGe HMOSFET
Shi Jin,Chen Pei-yi,Li Chen,Luo Guangli,Zhu Peiyu,Huang Wentao,Tsien Pei-Hsin,Li Shurong,Zhen Yunfen,Guo Weilian +9 more
- Vol. 1, pp 604-606
TLDR
In this paper, a kind of strained SiGe-channel P-MOSFET was proposed to improve the performance compared to the Si-germanium epitaxial layers.Abstract:
The advances in the growth of pseudomorphic silicon-germanium epitaxial layers combined with the strong need for high-speed devices have led to increased interest in silicon-based heterojunction field-effect transistors. Here we present a kind of strained SiGe-channel P-MOSFET which can offer better performance compared to the Si device. When applying to the sample with W/L value of 14/7, a 30% improvement can be achieved in transconductance.read more
Citations
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Journal ArticleDOI
Analogue micropower FET techniques review
TL;DR: In this paper, a detailed introduction to published analogue circuit design techniques using Si and Si/SiGe FET devices for very low power applications is presented, including sub-threshold operation in FETs, micro-current mirrors and cascode techniques, voltage level-shifting and class-AB operation, the bulk drive approach, the floating-gate method, micropower transconductance-capacitance and log-domain filters and strained-channel FET technologies.
Proceedings ArticleDOI
Optimization of electrical parameters in SiGe channel nMOSFET
TL;DR: In this paper, a silicon-germanium (SiGe) n-channel heterojunction MOSFET is presented under the consideration that channel is made of SiGe and source/drain regions are made of Silicon (Si). Bandgap engineering has been done to improve the electrical behavior of the device.
References
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Journal ArticleDOI
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
TL;DR: In this article, n-type metal-oxide-semiconductor field effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si/sub 1/spl minus/x/Ge/sub x/ standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si Similar enhancements are observed in the device transconductance
Electron Mobility Enhancement in S trained-Si N-Type Metal-Oxide- S emiconductor Field-Effect Transistors
TL;DR: In this paper, n-type metal-oxide-semiconductor field effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si1 -zGez were used.
Journal ArticleDOI
SiGe-channel heterojunction p-MOSFET's
S. Verdonckt-Vandebroek,Emmanuel F. Crabbe,Bernard S. Meyerson,David L. Harame,Phillip J. Restle,J.M.C. Stork,Jeffrey B. Johnson +6 more
TL;DR: In this paper, the p-channel SiGe MOSFETs with SiGe channels have acceptable short-channel behavior at 0.20 /spl mu/m channel lengths and are preferable to p/sup +/ polysilicon-gate p-MOSFTs for 2.5 V operation.
Journal ArticleDOI
Strained-Si heterostructure field effect transistors
TL;DR: In this paper, the authors report on the recent developments and the performance level achieved in the strained-Si/SiGe material system, and propose possible future applications of strained Si and SiGe in high-performance SiGe CMOS technology.
Journal ArticleDOI
High-mobility strained-Si PMOSFET's
TL;DR: In this paper, a new high channel mobility strained-Si PMOSFET is presented, which is grown epitaxially on a completely relaxed step-graded Si/Si/SiO/sub 0.18/ buffer layer on Si(100) substrate.