Journal ArticleDOI
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
TLDR
In this article, n-type metal-oxide-semiconductor field effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si/sub 1/spl minus/x/Ge/sub x/ standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si Similar enhancements are observed in the device transconductanceAbstract:
Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si/sub 1/spl minus/x/Ge/sub x/ Standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si Similar enhancements are observed in the device transconductance In addition, buried channel devices show peak room temperature mobilities about three times that of control devices >read more
Citations
More filters
Journal ArticleDOI
Strain Tuning of Ferroelectric Thin Films
Darrell G. Schlom,Long Qing Chen,Chang-Beom Eom,Karin M. Rabe,Stephen K. Streiffer,Jean-Marc Triscone +5 more
TL;DR: In this paper, the effect of biaxial strain on the properties of epitaxial ferroelectric thin films and superlattices is discussed. But the results for single-layer thin films are not discussed.
Journal ArticleDOI
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Minjoo L. Lee,Eugene A. Fitzgerald,Mayank T. Bulsara,Matthew T. Currie,Anthony J. Lochtefeld +4 more
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.
Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Journal ArticleDOI
A 90-nm logic technology featuring strained-silicon
Scott E. Thompson,Mark Armstrong,C. Auth,Mohsen Alavi,M. Buehler,R. Chau,S. Cea,Tahir Ghani,G. Glass,T. Hoffman,Chia-Hong Jan,C. Kenyon,Jason Klaus,K. Kuhn,Z. Ma,B. McIntyre,Kaizad Mistry,Anand Portland Murthy,B. Obradovic,Ramune Nagisetty,P. Nguyen,Swaminathan Sivakumar,R. Shaheed,Lucian Shifren,B. Tufts,S. Tyagi,M. Bohr,Y. El-Mansy +27 more
TL;DR: In this paper, a leading-edge 90-nm technology with 1.2-nm physical gate oxide, 45-nm gate length, strained silicon, NiSi, seven layers of Cu interconnects, and low/spl kappa/CDO for high-performance dense logic is presented.
Journal ArticleDOI
Ultra-strength materials
TL;DR: In this paper, an overview of the principal deformation mechanisms of ultra-strength materials is presented, and the fundamental defect processes that initiate and sustain plastic flow and fracture are described, as well as the mechanics and physics of both displacive and diffusive mechanisms.
References
More filters
Journal ArticleDOI
Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
Eugene A. Fitzgerald,Ya-Hong Xie,Don Monroe,P.J. Silverman,J. M. Kuo,Ahmet Refik Kortan,F. A. Thiel,B. E. Weir +7 more
TL;DR: In this article, a large lattice constant on Si has been obtained by growing compositionally graded GexSi1−x on Si, and these buffer layers have been characterized with electron-beam-induced current, transmission electron microscopy and x-ray diffraction to determine the extent of relaxation, threading dislocation density, the surface morphology, and the optical properties.
Journal ArticleDOI
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si / Si x Ge 1 − x Superlattices
TL;DR: The observation of two-dimensional electron systems and enhanced mobilities in Si/Ge strained-layer multilayer structures and the importance of the built-in strain in lowering the conduction band in Si is emphasized.
Proceedings ArticleDOI
Characterization of the electron mobility in the inverted l100g Si surface
A.G. Sabnis,J.T. Clemens +1 more
TL;DR: In this article, the effective mobility of electrons in the inverted 〈100〉 Si surface was measured over a wide range of temperatures, gate voltages, and back-bias voltages.
Journal ArticleDOI
Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices
TL;DR: In this article, the authors show that when the growth conditions are very clean and the gradient is shallow enough (about 1% misfit per half micron), very good, relaxed films are obtained.
Journal ArticleDOI
High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
TL;DR: In this paper, modulation-doped Si/SiGe heterostructures were grown on different types of partly relaxed SiGe buffer layers, which are required in this material system to obtain a large enough conduction band offset.