Measurement of scattering rate and minimum conductivity in graphene.
Yan Wen Tan,Yanxi Zhang,Kirill I. Bolotin,Yue Zhao,Shaffique Adam,Euyheon Hwang,S. Das Sarma,Horst Stormer,Horst Stormer,Philip Kim +9 more
TLDR
The shape of the conductivity curves indicates that high mobility samples contain some short-range disorder whereas low mobility samples are dominated by long-range scatterers.Abstract:
The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of 1-20x10(3) cm2/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from 2-15x10(11) cm(-2). In the low carrier density limit, the conductivity exhibits values in the range of 2-12e2/h, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short-range disorder whereas low mobility samples are dominated by long-range scatterers.read more
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疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
Journal ArticleDOI
Ultrahigh electron mobility in suspended graphene
Kirill I. Bolotin,K. J. Sikes,Zhigang Jiang,Martin Klima,Geoffrey Fudenberg,James Hone,Philip Kim,Horst Stormer,Horst Stormer +8 more
TL;DR: In this paper, a single layer graphene was suspended ∼150nm above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das,Simone Pisana,Biswanath Chakraborty,S. Piscanec,Srijan Kumar Saha,Umesh V. Waghmare,Kostya S. Novoselov,H. R. Krishnamurthy,Andre K. Geim,Andrea C. Ferrari,A. K. Sood +10 more
TL;DR: This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
Journal ArticleDOI
Approaching ballistic transport in suspended graphene.
TL;DR: This work shows that the fluctuations are significantly reduced in suspended graphene samples and reports low-temperature mobility approaching 200,000 cm2 V-1 s-1 for carrier densities below 5 x 109 cm-2, which cannot be attained in semiconductors or non-suspended graphene.
References
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疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.