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Journal ArticleDOI

Mechanics of rollable and foldable film-on-foil electronics

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TLDR
In this article, the mechanics of film-on-foil transistors on steel and plastic foils have been discussed in the context of thin-film transistors, where the transistors function well after the foils are rolled to small radii of curvature.
Abstract
The mechanics of film-on-foil devices is presented in the context of thin-film transistors on steel and plastic foils Provided the substrates are thin, such transistors function well after the foils are rolled to small radii of curvature When a substrate with a lower elastic modulus is used, smaller radii of curvature can be achieved Furthermore, when the transistors are placed in the neutral surface by sandwiching between a substrate and an encapsulation layer, even smaller radii of curvature can be attained Transistor failure clearly shows when externally forced and thermally induced strains add to, or subtract from, each other

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Citations
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Proceedings ArticleDOI

Fabrication of Flexible and Transferable RTDs via Fused Deposition Modelling 3D Printing

TL;DR: In this article, two types of conductive PLA filaments were used: carbon black (CB) and graphene PLA (GPL) filaments, and the CB and GPL sensors showed conductance of 0.0238 mS and 0.1042 mS respectively.
Journal ArticleDOI

TFD Device with Symmetrical Structure of Flexible Electrode Subject to Flexible Substrate

TL;DR: In this paper, the electrode material of TFD (Thin Film Diode) device subject to flexible substrate was tested and a symmetric electrode structure on both sides of insulation layer.
Book ChapterDOI

Cyclic Nanoindentation for Examination of the Piezoresistivity and the Strain-Sensor Behavior of Indium-Tin-Oxide Thin Films

TL;DR: In this article, the piezoresistivity of indium-tin-oxide (ITO) thin films was investigated using the three point bending method combined with cyclic indentation.
Journal ArticleDOI

Effects of Mechanical Strain on the Electrical Performance of Amorphous Silicon Thin-Film Transistors with a New Gate Dielectric

TL;DR: In this paper, the effect on the overall flexibility of TFTs of replacing the brittle SiNx gate dielectric with a new, resilient SiO2-silicone hybrid material, which is deposited by plasma enhanced chemical vapor deposition.
References
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Journal ArticleDOI

Large deformation and geometric instability of substrates with thin-film deposits

TL;DR: In this paper, experimental and theoretical results are presented on the evolution of large elastic deformation, non-uniform curvature, shape changes and geometric instability in substrates of Si wafers with metal films.
Journal ArticleDOI

Some elementary connections between curvature and mismatch strain in compositionally graded thin films

TL;DR: In this paper, the relationship of the overall curvature of the film to the variation of properties and mismatch strain is reviewed, and it is shown that the mismatch strain distribution in the film can be expressed in terms of the dependence of curvature on film thickness.
Journal ArticleDOI

a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C

TL;DR: In this paper, high performance amorphous silicon thin-film transistors (a-Si:H TFTs) were fabricated on 2 mil. (51 µm) thick polyimide foil substrates.
Journal ArticleDOI

Elastic Bending of Semiconductor Wafer Revisited and Comments on Stoney's Equation

TL;DR: In this article, the authors re-examine the Stoney's equation and point out that it was derived based on a neutral axis for zero bending moment which does not exist in the pure bending of a steel ruler on which his derivation was based.
Journal ArticleDOI

a-Si:H Thin-Film Transistors on Rollable 25-µ;m Thick Steel Foil

TL;DR: In this article, the first amorphous silicon thin film transistors (TFTs) were fabricated on flexible, ultra-thin substrates of 25 µm thick stainless steel foil.
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