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Mechanics of rollable and foldable film-on-foil electronics

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TLDR
In this article, the mechanics of film-on-foil transistors on steel and plastic foils have been discussed in the context of thin-film transistors, where the transistors function well after the foils are rolled to small radii of curvature.
Abstract
The mechanics of film-on-foil devices is presented in the context of thin-film transistors on steel and plastic foils Provided the substrates are thin, such transistors function well after the foils are rolled to small radii of curvature When a substrate with a lower elastic modulus is used, smaller radii of curvature can be achieved Furthermore, when the transistors are placed in the neutral surface by sandwiching between a substrate and an encapsulation layer, even smaller radii of curvature can be attained Transistor failure clearly shows when externally forced and thermally induced strains add to, or subtract from, each other

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Wireless dual-function network device dynamically switching and reconfiguring from a wireless network router state of operation into a wireless network coordinator state of operation in a wireless communication network

TL;DR: In this article, the authors propose a wireless multi-function network device for use on a wireless communication network, that can serve multiple functions and dynamically switch and reconfigure from a network router into a network coordinator in the event that the originally designated network coordinator is permanently or temporally disabled.
Journal ArticleDOI

Recent Process of Flexible Transistor‐Structured Memory

TL;DR: This work reviews the recent development of transistor-structured artificial synapse, a special type of FTSM, that emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions.
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Flexible MgO Barrier Magnetic Tunnel Junctions

TL;DR: Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process in this article, which yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching.
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Vertical nanowire transistor in flexible polymer foil

TL;DR: In this article, a vertical nanowire field effect transistor was constructed by growing vertical wires in the cylindrical pores of a polymer foil stack, with a diameter of approximately 100 nm and packing density up to 108 cm−2.
Journal ArticleDOI

Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography

TL;DR: In this paper, a flexible image sensor with 75dots∕in. resolution over 180×180pixels and with sensitivity of 1.2pW∕cm2 was demonstrated.
References
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Journal ArticleDOI

Large deformation and geometric instability of substrates with thin-film deposits

TL;DR: In this paper, experimental and theoretical results are presented on the evolution of large elastic deformation, non-uniform curvature, shape changes and geometric instability in substrates of Si wafers with metal films.
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Some elementary connections between curvature and mismatch strain in compositionally graded thin films

TL;DR: In this paper, the relationship of the overall curvature of the film to the variation of properties and mismatch strain is reviewed, and it is shown that the mismatch strain distribution in the film can be expressed in terms of the dependence of curvature on film thickness.
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a-Si:H TFTs made on polyimide foil by PE-CVD at 150 °C

TL;DR: In this paper, high performance amorphous silicon thin-film transistors (a-Si:H TFTs) were fabricated on 2 mil. (51 µm) thick polyimide foil substrates.
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Elastic Bending of Semiconductor Wafer Revisited and Comments on Stoney's Equation

TL;DR: In this article, the authors re-examine the Stoney's equation and point out that it was derived based on a neutral axis for zero bending moment which does not exist in the pure bending of a steel ruler on which his derivation was based.
Journal ArticleDOI

a-Si:H Thin-Film Transistors on Rollable 25-µ;m Thick Steel Foil

TL;DR: In this article, the first amorphous silicon thin film transistors (TFTs) were fabricated on flexible, ultra-thin substrates of 25 µm thick stainless steel foil.
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