Patent
Method of manufacturing capacitor
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TLDR
In this paper, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding.Abstract:
In the invention, the thin natural oxide film formed on a surface of a first polycrystalline silicon layer containing an impurity diffused at a high concentration is transformed into a silicon nitride film by rapid nitriding. When the resultant structure is placed in a low-pressure CVD furnace to deposit a silicon nitride film, no natural oxide film is grown on the polycrystalline silicon layer. Hence, when the invention is applied to manufacture of a capacitor for a memory cell, the inter-layer insulative film of the capacitor is not too thick. As a result, a reliable capacitor suitable for micropatterning of elements can be formed between the first and second polycrystalline silicon layers.read more
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References
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Journal ArticleDOI
Advanced cell structures for dynamic RAMs
TL;DR: In this paper, a number of DRAM cell structures are discussed, including the trench-capacitor cell, the substrate-plate trench-Capacitor, the dielectrically insulated trench cell and the buried stacked-CAPACitor cell.
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Method of making biomedical lead with lobed lead anchor
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