Journal ArticleDOI
Microcrystalline silicon.. Growth and device application
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In this paper, the process used to grow hydrogenated microcrystalline silicon (μc-Si:H) from a H 2 /SiH 4 -glow discharge plasma is explained in comparison to those for hydrogenated amorphous silicon (a-Si-H).Abstract:
Processes used to grow hydrogenated microcrystalline silicon (μc-Si:H) from a H 2 /SiH 4 -glow discharge plasma are explained in comparison to those for hydrogenated amorphous silicon (a-Si:H). Differences and similarities between μc-Si:H and a-Si:H-growth reactions in the plasma and on the film-growing surface are discussed, and the nucleus-formation process followed by epitaxial-like crystal growth process is illustrated as unique processes for the formulation of μc-Si:H. Determination of the effect of dangling-bond defect density on the propagation of the resulting μc-Si:H films is also discussed in parallel with the effect on a-Si:H in order to obtain a clue to improve opto-electronic properties of those materials for device applications especially for thin-film-silicon solar cells. Material issues to produce low cost and high efficiency solar cells are described, and finally recent progress in those issues is demonstrated.read more
Citations
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Journal ArticleDOI
Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications
Uwe Kortshagen,R. Mohan Sankaran,Rui N. Pereira,Rui N. Pereira,Steven L. Girshick,Jeslin J. Wu,Eray S. Aydil +6 more
TL;DR: The fundamentals of nanocrystal formation in plasmas are discussed, practical implementations of plasma reactors are reviewed, the materials that have been produced with nonthermal plAsmas and surface chemistries that have be developed are surveyed, and an overview of applications of plasma-synthesized nanocrystals is provided.
Journal ArticleDOI
Semiconductor solar cells: Recent progress in terrestrial applications
TL;DR: In this article, the authors discuss the progress, outstanding problems, and environmental issues associated with bulk Si, thin-film, and high-efficiency multi-junction solar cells, which form the basis of the so-called third generation photovoltaics technologies.
Journal ArticleDOI
Plasma silane concentration as a determining factor for the transition from amorphous to microcrystalline silicon in SiH4/H2 discharges
TL;DR: In this article, the microstructure transition from amorphous to microcrystalline silicon is defined in terms of the silane concentration in the plasma as opposed to the input gas flow.
Journal ArticleDOI
Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas
TL;DR: In this paper, a low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to rapidly synthesize Si quantum dots (QDs) embedded in an amorphous SiC (a-SiC) matrix at a low substrate temperature and without any commonly used hydrogen dilution.
Journal ArticleDOI
Rapid, low-temperature synthesis of nc-Si in high-density, non-equilibrium plasmas: enabling nanocrystallinity at very low hydrogen dilution
TL;DR: In this paper, the effect of hydrogen dilution ratio X (X is defined as the flow rate ratio of hydrogen to silane gas), ranging from 1 to 20, on the structural and optical properties of the deposited films, is extensively investigated by Raman spectroscopy, X-ray diffraction, Fourier transform infrared absorption spectrum, and scanning electron microscopy.
References
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Journal ArticleDOI
Amorphous silicon solar cell
D. E. Carlson,C R M Wronski +1 more
TL;DR: In this article, thin film solar cells, ∼ 1 μm thick, have been fabricated from amorphous silicon deposited from a glow discharge in silane, and the cells were made in a p i n structure by using doping gases in the discharge.
Journal ArticleDOI
Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
TL;DR: In this article, the formation kinetics of μc-Si:H has been investigated through the film depositions and plasma diagnoses in widely-scanned glow discharge plasma conditions; RF power density, SiH 4 /H 2 ratio and substrate temperature.
Journal ArticleDOI
Substitutional doping of amorphous silicon
W. E. Spear,P. G. Le Comber +1 more
TL;DR: In this article, it was shown that the electrical conductivity of a tetrahedral amorphous semiconductor can be controlled over many orders of magnitude by doping with substitutional impurities.
Journal ArticleDOI
Cross-Sections, Rate Constants and Transport Coefficients in Silane Plasma Chemistry
J. Perrin,O. Leroy,M. C. Bordage +2 more
TL;DR: A critical review of the basic data concerning the physics and chemistry of low pressure SiH 4 glow discharges used to deposit hydrogenated amorphous silicon films (a-Si:H) is presented in this article.
Journal ArticleDOI
Growth mechanism of microcrystalline silicon obtained from reactive plasmas
TL;DR: In this article, three models for the growth mechanism of hydrogenated microcrystalline silicon films (μc-Si:H) from reactive (silane and hydrogen mixture) plasmas are reviewed.