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Journal ArticleDOI

MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor

TLDR
In this paper, the growth of Bi 2 Te 3 thin films by metal organic chemical vapour deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium or bismuth sources respectively is investigated on pyrex substrates.
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This article is published in Thin Solid Films.The article was published on 1998-03-02. It has received 52 citations till now. The article focuses on the topics: Thermoelectric materials & Metalorganic vapour phase epitaxy.

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Journal ArticleDOI

Antisite defects of Bi2Te3 thin films

TL;DR: In this article, the authors have successfully grown Bi2Te3 thin films on CdTe(111)B using molecular-beam epitaxy and investigated structural and transport properties using in situ reflection high-energy electron diffraction, θ-2θ x-ray diffraction analysis, thermopower, and Hall measurements.
Journal ArticleDOI

Growth of Bi2Te3 and Sb2Te3 thin films by MOCVD

TL;DR: In this paper, metal organic chemical vapor deposition (MOCVD) was used for elaboration of Bi 2 Te 3 and Sb 2 Te3 using TMBi (Trimethylbismuth), TESb (Triethylantimony) and DETe (Diethyltellurium) as metal-organic sources.
Journal ArticleDOI

Transport properties of V–VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micromodule Peltier devices

TL;DR: In this paper, the detailed temperature dependence of electrical resistivity, n-and p-type carrier concentration, and Hall mobility of polycrystalline BiSbTe alloys (V-VI semiconductors) are presented.
Journal ArticleDOI

Structure and transport properties of (Bi1-xSbx)2Te3 thermoelectric materials prepared by mechanical alloying and pulse discharge sintering

TL;DR: In this article, the authors investigated the transport properties of the obtained (Bi 1-x Sb x ) 2 Te 3 samples with various Sb alloying contents and showed that the sample's transport properties are quite sensitive to the Sb content.
References
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Journal ArticleDOI

MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications

TL;DR: In this article, the characteristics of metalorganic chemical vapor deposition (MOCVD) of Bi2Te3, Sb 2Te3 and their superlattice structures are discussed.
Journal ArticleDOI

Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect

TL;DR: In this paper, the Seebeck coefficient α, electrical resistivity ϱ, thermal conductivity K and the coefficient Z of thermoelectric merit, are determined for narrow-gap V2VI3 semiconductors and semimetals.
Journal ArticleDOI

The thermoelectric properties and crystallography of Bi‐Sb‐Te‐Se thin films grown by ion beam sputtering

TL;DR: In this article, the effects of substrate temperature on the composition and microstructure of BiSb•Te•Se thin films are discussed and related to the Seebeck coefficient and resistivity.
Journal ArticleDOI

Transport properties of flash-evaporated (Bi1 − xSbx)2Te3 films I: Optimization of film properties

TL;DR: In this article, thermally grown SiO2 overlayers (SiO2/Si substrates) with flash evaporation on silicon wafers were determined in the temperature range from 80 to 400 K. Their transport properties, i.e., electrical conductivity, Hall coefficient, magnetoresistance coefficient, Hall mobility, Seebeck coefficient, thermal conductivity and thermoelectric figure of merit, were determined.
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