Journal ArticleDOI
MOCVD growth of Bi2Te3 layers using diethyltellurium as a precursor
TLDR
In this paper, the growth of Bi 2 Te 3 thin films by metal organic chemical vapour deposition (MOCVD) using diethytellurium and trimethylbismuth as tellurium or bismuth sources respectively is investigated on pyrex substrates.About:
This article is published in Thin Solid Films.The article was published on 1998-03-02. It has received 52 citations till now. The article focuses on the topics: Thermoelectric materials & Metalorganic vapour phase epitaxy.read more
Citations
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Journal ArticleDOI
A roadmap for electronic grade 2D materials
Natalie Briggs,Shruti Subramanian,Zhong Lin,Xufan Li,Xufan Li,Xiaotian Zhang,Kehao Zhang,Kai Xiao,David B. Geohegan,Robert M. Wallace,Long Qing Chen,Mauricio Terrones,Aida Ebrahimi,Saptarshi Das,Joan M. Redwing,Christopher L. Hinkle,Kasra Momeni,Adri C. T. van Duin,Vin Crespi,Swastik Kar,Joshua A. Robinson +20 more
Journal ArticleDOI
Antisite defects of Bi2Te3 thin films
Sunglae Cho,Yunki Kim,A. DiVenere,George K. Wong,George K. Wong,John B Ketterson,Jerry R. Meyer +6 more
TL;DR: In this article, the authors have successfully grown Bi2Te3 thin films on CdTe(111)B using molecular-beam epitaxy and investigated structural and transport properties using in situ reflection high-energy electron diffraction, θ-2θ x-ray diffraction analysis, thermopower, and Hall measurements.
Journal ArticleDOI
Growth of Bi2Te3 and Sb2Te3 thin films by MOCVD
TL;DR: In this paper, metal organic chemical vapor deposition (MOCVD) was used for elaboration of Bi 2 Te 3 and Sb 2 Te3 using TMBi (Trimethylbismuth), TESb (Triethylantimony) and DETe (Diethyltellurium) as metal-organic sources.
Journal ArticleDOI
Transport properties of V–VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micromodule Peltier devices
TL;DR: In this paper, the detailed temperature dependence of electrical resistivity, n-and p-type carrier concentration, and Hall mobility of polycrystalline BiSbTe alloys (V-VI semiconductors) are presented.
Journal ArticleDOI
Structure and transport properties of (Bi1-xSbx)2Te3 thermoelectric materials prepared by mechanical alloying and pulse discharge sintering
Liu Xue-Dong,Yong Ho Park +1 more
TL;DR: In this article, the authors investigated the transport properties of the obtained (Bi 1-x Sb x ) 2 Te 3 samples with various Sb alloying contents and showed that the sample's transport properties are quite sensitive to the Sb content.
References
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Journal ArticleDOI
MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications
TL;DR: In this article, the characteristics of metalorganic chemical vapor deposition (MOCVD) of Bi2Te3, Sb 2Te3 and their superlattice structures are discussed.
Journal ArticleDOI
Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect
TL;DR: In this paper, the Seebeck coefficient α, electrical resistivity ϱ, thermal conductivity K and the coefficient Z of thermoelectric merit, are determined for narrow-gap V2VI3 semiconductors and semimetals.
Journal ArticleDOI
The thermoelectric properties and crystallography of Bi‐Sb‐Te‐Se thin films grown by ion beam sputtering
H. Noro,K. Sato,H. Kagechika +2 more
TL;DR: In this article, the effects of substrate temperature on the composition and microstructure of BiSb•Te•Se thin films are discussed and related to the Seebeck coefficient and resistivity.
Journal ArticleDOI
Transport properties of flash-evaporated (Bi1 − xSbx)2Te3 films I: Optimization of film properties
TL;DR: In this article, thermally grown SiO2 overlayers (SiO2/Si substrates) with flash evaporation on silicon wafers were determined in the temperature range from 80 to 400 K. Their transport properties, i.e., electrical conductivity, Hall coefficient, magnetoresistance coefficient, Hall mobility, Seebeck coefficient, thermal conductivity and thermoelectric figure of merit, were determined.
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Properties of thin film thermoelectric materials: application to sensors using the Seebeck effect
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H. Noro,K. Sato,H. Kagechika +2 more