Journal ArticleDOI
Mosfet carrier mobility model based on gate oxide thickness, threshold and gate voltages
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TLDR
In this paper, the universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E eff = (ηQ inv + Q b ) ϵ Si has been re-examined.Abstract:
The widely accepted universal dependence of N- and P-MOSFETs carrier mobility on effective vertical field E eff = (ηQ inv + Q b ) ϵ Si has been re-examined. New empirical mobility models for both electrons and holes expressed in terms of Tox, Vt and Vg explicitly are formulated. New empirical mobility models are confirmed with experimental data taken from devices of different technologies. It is also shown that the hole mobility of both the surface and buried channel P-MOSFETs can be unified for the first time by a single universal mobility equation, rather than two separate equations as previously thought necessary.read more
Citations
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Journal ArticleDOI
Observation of bulk HfO2 defects by spectroscopic ellipsometry
TL;DR: In this paper, the authors used spectroscopic ellipsometry to investigate the oxidation of pure Hf films on silicon for the formation of HfO2 (hafnium oxide) gate-dielectric films in advanced complementary metaloxide-semiconductor field effect transistors.
Journal ArticleDOI
CMOS circuit performance enhancement by surface orientation optimization
TL;DR: In this article, a 15% improvement in gate delay can be expected by optimizing the surface orientation of a high/spl kappa/interface, depending upon the type of logic gate, the off-state leakage specification, and technology scaling trends.
Journal ArticleDOI
MOSFET modeling for RF IC design
TL;DR: In this paper, a high-frequency (HF) modeling of MOSFETs for radiofrequency (RF) integrated circuit (IC) design is discussed by accounting for important physical effects at both dc and HF.
BookDOI
Device Modeling for Analog and RF CMOS Circuit Design: Ytterdal/Device
TL;DR: The BSIM4 MOSFET model as discussed by the authors has been used for accurate distortion analysis of passive devices in CMOS technologies, and the EKV model has also been used to model process variations and device mismatches.
Journal ArticleDOI
Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric
Donggun Park,Ya-Chin King,Qiang Lu,Tsu-Jae King,Chenming Hu,A. Kalnitsky,Sing-Pin Tay,Chia-Cheng Cheng +7 more
TL;DR: Ta/sub 2/O/sub 5/ gate dielectric is fabricated and characterized as a possible replacement for MOS transistors with ultra-thin gate silicon dioxide in this article.
References
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Journal ArticleDOI
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
TL;DR: In this paper, the inversion layer mobility in n-and p-channel Si MOSFETs with a wide range of substrate impurity concentrations (10/sup 15/ to 10/sup 18/ cm/sup -3/) was examined.
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