Journal ArticleDOI
Nano-field effect transistor with an organic self-assembled monolayer as gate insulator
J. Collet,Dominique Vuillaume +1 more
TLDR
In this article, the authors demonstrate the realization and functioning of a hybrid (organic/silicon) nanometer-size field effect transistor (nano-FET) having a gate length of 25 nm.Abstract:
We demonstrate the realization and functioning of a hybrid (organic/silicon) nanometer-size field effect transistor (nano-FET) having a gate length of 25 nm. The gate insulator is an organic self-assembled monolayer (SAM) of alkyltrichlorosilanes (∼2 nm thick). We have used densely packed SAMs with functionalized end groups (–CH3, –CH=CH2, –COOH) that all exhibit reduced leakage current density (10−8–10−5 A/cm2). This nano-FET is free of punchthrough down to 50 nm, and shows a good field effect behavior at 25 nm. This demonstrates the compatibility of these SAMs with semiconductor device processes and their wide capability for applications in nanometer-scale electronics.read more
Citations
More filters
Journal ArticleDOI
Unconventional Methods for Fabricating and Patterning Nanostructures.
TL;DR: Lithography with Neutral Metastable Atoms 1838 4.1.
Journal ArticleDOI
Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics
TL;DR: In this article, the authors review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics.
Journal ArticleDOI
Interface Engineering for Organic Electronics
TL;DR: In this article, the strategies of utilizing surfactant-modified cathodes, hole-transporting buffer layers, and self-assembled monolayer (SAM)-modified anodes are highlighted.
Journal ArticleDOI
Low-voltage organic transistors with an amorphous molecular gate dielectric
Marcus Halik,Hagen Klauk,Ute Zschieschang,Günter Schmid,Christine Dehm,Markus Dr. Schütz,Steffen Maisch,Franz Effenberger,Markus Brunnbauer,Francesco Stellacci +9 more
TL;DR: This work demonstrates a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene), which operate with supply voltages of less than 2 V yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics.
Journal ArticleDOI
High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors.
TL;DR: A comparison study of high-k Dielectric Materials for OFETs using self-Assembled Monoand Multilayers and Inorganic-Organic Bilayers to study the properties of polymeric-Nanoparticle Composites.
References
More filters
Book
An Introduction to Ultrathin Organic Films: From Langmuir--Blodgett to Self--Assembly
TL;DR: In this paper, the authors present a model of self-assembled monolayers for the analysis of surface properties of Langmuir-Blodgett (LB) and Self-Assembled Monolayers (SA) films.
Journal ArticleDOI
Langmuir-Blodgett films
TL;DR: The Langmuir trough enables high quality organic layers (Langmuir-Blodgett films) to be deposited onto a variety of substrates as discussed by the authors, including two-dimensional magnetism, integrated and electro-optics, electron beam lithography, biological membranes, charge injection devices and field effect transistors.
Journal ArticleDOI
Structure and reactivity of alkylsiloxane monolayers formed by reaction of alkyltrichlorosilanes on silicon substrates
TL;DR: In this article, the authors characterized the properties of ordered alkylsiloxane monolayer films and showed that they were stable in common organic solvents, water, and acid, but were destroyed by prolonged exposure to base.
Journal ArticleDOI
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
TL;DR: In this article, an accurate determination of the physical oxide thickness is achieved by fitting experimentally measured capacitanceversus-voltage curves to quantum-mechanically simulated capacitance-versusvoltage results.