Journal ArticleDOI
Nature of native defects in ZnO.
TLDR
This study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements and revealed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration.Abstract:
This study revealed the nature of native defects and their roles in ZnO through positron annihilation and optical transmission measurements. It showed oxygen vacancies are the origin for the shift in the optical absorption band that causes the red or orange coloration. It also revealed experimental evidence that the donor nature of oxygen vacancy is approximately 0.7 eV. In addition, this work showed the Zn interstitial was not the donor in the as-grown ZnO and supported recent calculations that predicted hydrogen in an oxygen vacancy forms multicenter bonds and acts as a shallow donor.read more
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Journal ArticleDOI
Defects in ZnO
TL;DR: A review of defects in ZnO is presented in this paper, with an emphasis on the physical properties of point defects in bulk crystals, and the problem of acceptor dopants remains a key challenge.
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Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
Stephan Lany,Alex Zunger +1 more
TL;DR: In this paper, the authors compared the results of different gap-correction methods and concluded that to date there is no universal scheme for band gap correction in general defect systems, and they turn instead to classification of different types of defect behavior to provide guidelines on how the physically correct situation in an LDA defect calculation can be recovered.
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ZnO nanostructures for optoelectronics: Material properties and device applications
TL;DR: In this paper, a brief overview of synthesis methods of ZnO nanostructures, with particular focus on the growth of perpendicular arrays of nanorods/nanowires which are of interest for optoelectronic device applications.
Journal ArticleDOI
Defect identification in semiconductors with positron annihilation: Experiment and theory
Filip Tuomisto,Ilja Makkonen +1 more
TL;DR: Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors and combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings as mentioned in this paper.
Journal ArticleDOI
Point defects in ZnO: an approach from first principles
TL;DR: Overall defect energetics suggests a preference for the native donor-type defects over acceptor- type defects in ZnO, which is likely to play essential roles in electrical properties.