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Near-unity photoluminescence quantum yield in MoS2

Matin Amani, +4 more
- 15 Oct 2016 - 
- Vol. 350, Iss: 6264, pp 1065-1068
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TLDR
In this paper, an air-stable solution-based chemical treatment by an organic superacid was proposed to improve the photoluminescence and minority carrier lifetime of MoS 2 monolayers by over two orders of magnitude.
Abstract
Two-dimensional (2D) transition-metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure-of-merit, the room-temperature photoluminescence quantum yield (QY) is extremely poor. The prototypical 2D material, MoS 2 is reported to have a maximum QY of 0.6% which indicates a considerable defect density. We report on an air-stable solution-based chemical treatment by an organic superacid which uniformly enhances the photoluminescence and minority carrier lifetime of MoS 2 monolayers by over two orders of magnitude. The treatment eliminates defect-mediated non-radiative recombination, thus resulting in a final QY of over 95% with a longest observed lifetime of 10.8±0.6 nanoseconds. Obtaining perfect optoelectronic monolayers opens the door for highly efficient light emitting diodes, lasers, and solar cells based on 2D materials.

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Citations
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TL;DR: The opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems are reviewed, and the prospects for computational and non-computational applications are considered.
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