Journal ArticleDOI
New Dielectrics for Gate Oxides and Surface Passivation on GaN
Brent P. Gila,G. T. Thaler,A. H. Onstine,M. Hlad,A. Gerger,Andrew M. Herrero,K. K. Allums,D. Stodilka,Soohwan Jang,B. S. Kang,Timothy J. Anderson,C. R. Abernathy,Fan Ren,Stephen J. Pearton +13 more
- Vol. 50, Iss: 6, pp 1016-1023
TLDR
In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects.Abstract:
In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride interface properties by reducing the lattice mismatch and accelerated aging effects for these dielectrics on the nitride semiconductors. The authors review progress in obtaining low interface state densities and reducing current collapse with these dielectrics on GaN and examine the thermal stability and compatibility with processing schemes for HEMTsread more
Citations
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Journal ArticleDOI
Electronic surface and dielectric interface states on GaN and AlGaN
TL;DR: In this article, the authors summarize the current understanding of the gate leakage current and current collapse mechanisms, where awareness of the surface defects is the key to controlling and improving device performance.
Journal ArticleDOI
Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis
TL;DR: In this article, the frequency dependent conductance measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were investigated.
Journal ArticleDOI
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide
TL;DR: In this article, the drift mobility of the MOSHFETs, evaluated on large-gate FET structures, was significantly higher than that of the AlGaN/GaN HFETs.
Journal ArticleDOI
High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate
TL;DR: In this paper, an ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapordeposition-grown SiN have been successfully fabricated on 100mm Si substrates.
Journal ArticleDOI
Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness
TL;DR: In this paper, the transport properties of AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) were investigated.
References
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Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.
Journal ArticleDOI
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Steven C. Binari,K. Ikossi,J.A. Roussos,Walter Kruppa,Doewon Park,Harry B. Dietrich,Daniel D. Koleske,Alma Wickenden,R. L. Henry +8 more
TL;DR: In this article, the dc small-signal and microwave power output characteristics of AlGaN/GaN HEMTs are presented, and it is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer.
Journal ArticleDOI
Fabrication and performance of GaN electronic devices
TL;DR: In this paper, the development of fabrication processes for these devices and the current state-of-the-art in device performance, for all of these structures, are discussed. And the authors also detail areas where more work is needed, such as reducing defect densities and purity of epitaxial layers, the need for substrates and improved oxides and insulators, improved p-type doping and contacts and an understanding of the basic growth mechanisms.
Journal ArticleDOI
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
TL;DR: In this paper, the authors report on the AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (MOS-HFET) and present the results of the comparative studies of this device and a base line AlGa n/Ga n heterostructured transistor (HFET), for a 5/spl mu/ source-to-drain opening, the maximum current was close to 600 mA/mm for both devices.