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Journal ArticleDOI

Noise in single injection diodes. I. A survey of methods

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TLDR
In this paper, a critical discussion is given of existing methods for the computation of noise in single injection space−charge-limited (SCL) devices: the salami method, the Langevin method, and the impedance field method.
Abstract
A critical discussion is given of existing methods for the computation of noise in single injection space−charge−limited (SCL) devices: the salami method, the Langevin method, and the impedance field method. In addition, a new method is set forth, which in one form (finite volume divisions Δ3r) presents a lumped network description of noise and electrical parameters, whereas in another form (Δ3r→0) it presents a continuous media transport picture which is characterized by a transfer impedance tensor. The first form ties in with a modified salami method, whereas the second form is the substratum from which the more global impedance field formulas can be derived. A necessary and sufficient condition under which the noise is expressible as generalized Nyquist noise is obtained. For the simplest device, the thermal electron trap−free insulator, this is applied to one−dimensional as well as some three−dimensional geometries.

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Citations
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Microscopic simulation of electronic noise in semiconductor materials and devices

TL;DR: In this article, a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices is presented based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver.
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Macroscopic and microscopic methods for noise in devices

TL;DR: In this paper, the authors present a compendium of macroscopic methods used for noise computation, and a microscopic description of the underlying microscopic description is provided. But in-depth specific device noise computations are outside the scope of this review.
Journal ArticleDOI

An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs

TL;DR: In this article, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated based on an active transmission line concept and two-dimensional (2D) device simulations.
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Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices

TL;DR: In this article, the authors show that the Klaassen-Prins equation is not always valid, even for short-channel MOSFETs and that induced gate noise can also be present.
Journal ArticleDOI

Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]

TL;DR: Based on the active line concept, a novel approach for the calculation of the high frequency noise performance of field effect transistors (FETs) is proposed in this article, using a simple analytical theory, the FET small signal equivalent circuit as well as the macroscopic noise sources and their correlation are calculated for different two-port terminations.
References
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Journal ArticleDOI

Thermal Agitation of Electric Charge in Conductors

TL;DR: In this article, the electromotive force due to thermal agitation in conductors is calculated by means of principles in thermodynamics and statistical mechanics, and the results obtained agree with results obtained experimentally.
Journal ArticleDOI

Irreversibility and Generalized Noise

TL;DR: In this article, a relation between the generalized resistance and the generalized forces in linear dissipative systems is obtained, which forms the extension of the Nyquist relation for the voltage fluctuations in electrical impedances.
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On Onsager's Principle of Microscopic Reversibility

TL;DR: In this article, a short synopsis of Onsagcr' s theory of reciprqcal relauons in irreversible processes is given, where the theory is applied to a number of simple examples, including thermomolecular pressure difference and conduction of electricity.
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