Journal ArticleDOI
Observation of ion bombardment damage in silicon
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In this article, the ion dose needed to form amorphous silicon as a function of the temperature of the silicon during bombardment was studied and it was shown that the bombarded regions exhibit various hues until eventually when they become completely amomorphous they appear "milky" due to the Rayleigh scattering of light.Abstract:
Thin films of single crystals of both n-type and p-type silicon contain disordered zones ∼ 50 A in diameter, discernible in the electron microscope after bombardment with ∼ 1013 Ne+ ions cm−2. As the dose increases these zones become more numerous until eventually (≳ 1014 ions cm−2) they overlap, creating a continuous surface layer which electron diffraction shows to be amorphous silicon. The individual zones disappear on annealing between 400 and 500°C, and at ∼630°C the amorphous layer recrystallizes epitaxially upon the underlying silicon, leaving an array of dislocation loops and dipoles. The bombarded regions exhibit various hues until eventually when they become completely amorphous they appear ‘milky’ due to the Rayleigh scattering of light. This appearance has been used as a convenient method to study the ion dose needed to form amorphous silicon as a function of the temperature of the silicon during bombardment.read more
Citations
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Ion implantation in semiconductors—Part II: Damage production and annealing
TL;DR: In this article, a qualitative description of the damage produced by an implanted ion is presented, followed by a partial inventory of the basic defects that are found in ion-implanted silicon, where theoretical predictions are compared to a variety of experimental data.
Journal ArticleDOI
Criteria for bombardment-induced structural changes in non-metallic solids
H. M. Naguib,Roger Kelly +1 more
TL;DR: In this article, both a temperature-ratio and a bond-type criterion are used to predict the occurrence of amorphization or crystallization in non-metallic solids induced by energetic heavy ions.
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Ion implantation into GaN
TL;DR: The current status of ion beam processing of GaN is reviewed in this article, where the authors discuss the following aspects of ion implantation into GaN: (i) damage build-up and amorphization, (ii) preferential surface disordering and loss of nitrogen during ion bombardment, (iii) ion-beam-induced porosity of amorphous GaN due to material dissociation, anomalous surface erosion during ion radiation at elevated temperatures, (iv) the effect of implantation disorder on mechanical properties, (vi) current progress on annealing of implant
Journal ArticleDOI
High density cascade effects
TL;DR: In this article, the effects of high density cascades in solids are discussed with reference to their effects in the bulk (i.e. damage production and inert gas detrapping) and on the surface properties (e.g. sputtering, secondary ion and electron emission).
Journal ArticleDOI
Crystalline to amorphous transformation in ion-implanted silicon: a composite model
John R. Dennis,Edward B. Hale +1 more
TL;DR: In this paper, the authors used the overlap damage model to determine the critical dose from the data, the size of the amorphous region around the ion track, and the degree of overlap damage required for amorphization.
References
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Angular Distributions of (α, n) Reaction son Be and C
TL;DR: The angular distributions of neutrons from the Be 9 (α, n )C 12 reaction which leaves C 12 in its ground-, 4.43-and 9.6-MeV excited states have been measured for alpha particle energies between 17.5 and 22.1 MeV as discussed by the authors.
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An investigation of thermal spikes by studying the high energy sputtering of metals at elevated temperatures
TL;DR: In this paper, the sputtering ratio of polycrystals with 45 kev Xe+, A+ and Ne+ ions was studied as a function of temperature, and it was shown that at temperatures approaching the melting point the curve exhibited an approximately exponential rise.
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Conversion of crystalline germanium to amorphous germanium by ion bombardment
TL;DR: In this article, the size and structure of the damaged regions generated by the incident ions have been examined at both temperatures using transmission electron microscopy, and detailed evidence is presented which shows that damaged regions had a size which was dependent on the temperature of the specimen during bombardment and a structure which was amorphous and less dense than the crystalline matrix in which they were located.
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Struktur des amorphen Germaniums und Siliciums
H. Richter,G. Breitling +1 more
TL;DR: Amorphe Ge-and Si-Aufdampfschichten wurden with CuKα, MoKα and gefilterter Ag-Strahlung untersucht.
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Damage to Silicon Produced by Bombardment with Helium Ions
TL;DR: In this article, the effects of bombarding a silicon single crystal surface with 3×104 electron volt helium ions have been examined experimentally, and the effect of bombardment is to convert the surface layer to a quasi-stable amorphous form, which may be partially restored to the crystalline state upon annealing.