Journal ArticleDOI
On a GaN-based ion sensitive field-effect transistor (ISFET) with a hydrogen peroxide surface treatment
TLDR
In this article, a GaN-based ion sensitive field effect transistor (ISFET) prepared by a hydrogen peroxide (H 2 O 2 ) treatment is fabricated and studied, and a 3-nm-thick Ga x O y layer formed by an immersion in H 2 o 2 solution is examined and confirmed by EDS and XPS analyses.Abstract:
A GaN-based ion sensitive field-effect transistor (ISFET) prepared by a hydrogen peroxide (H 2 O 2 ) treatment is fabricated and studied. A 3-nm-thick Ga x O y layer formed by an immersion in H 2 O 2 solution is examined and confirmed by EDS and XPS analyses. Experimentally, the studied pH-ISFET presents a higher voltage sensitivity (54.88 mV/pH), a higher current sensitivity (−56.09 μA/pH mm), a lower drift rate (1.41 μA/h mm), an extremely low hysteresis (0.4 mV), and a lower voltage decay rate (−0.14 mV/pH day) after 28 days. Moreover, insignificant interference effects from Na + and K + ions were observed. Thus, the studied GaN-based ISFET utilizing an H 2 O 2 treatment promises to fabricate high-performance pH sensing applications.read more
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Journal ArticleDOI
Microfabricated electrochemical pH and free chlorine sensors for water quality monitoring: recent advances and research challenges
TL;DR: In this article, the authors discuss different physical configurations of microfabricated sensors, including potentiometric electrodes, ion-sensitive field-effect transistors, and chemo-resistors/transistors for electrochemical pH sensing.
Journal ArticleDOI
High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
Naif H. Al-Hardan,Muhammad Azmi Abdul Hamid,Naser M. Ahmed,Azman Jalar,Roslinda Shamsudin,Norinsan Kamil Othman,Lim Kar Keng,Wee Siong Chiu,Hamzah Naser Alrawi +8 more
TL;DR: A promising application of PSi in the field for detecting hydrogen ions in different solutions and has a sensitivity value of 66 mV/pH that is considered a super Nernstian value.
Journal ArticleDOI
Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment
Chun-Chia Chen,Huey-Ing Chen,I-Ping Liu,Hao-Yeh Liu,Po-Cheng Chou,Jian-Kai Liou,Wen-Chau Liu +6 more
TL;DR: In this paper, a GaN-based Schottky diode-type sensor with a GaOx layer was studied and demonstrated, where a thin Gaox layer inserted in Pd/GaN interface is oxidized by the immersion in an H2O2 solution at room temperature.
Journal ArticleDOI
Hydrogen sensing performance of a Pd/HfO2/GaOx/GaN based metal-oxide-semiconductor type Schottky diode
TL;DR: An interesting hydrogen sensor based on a Pd/HfO2/GaOx/GaN metal-oxide-semiconductor (MOS) structure is fabricated and demonstrated in this paper.
References
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Journal ArticleDOI
Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements
TL;DR: The development of an ion-sensitive solid-state device that combines the principles of an MOS transistor and a glass electrode and can be used for measurements of ion activities in electrochemical and biological environments is described.
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Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Thirty years of ISFETOLOGY: What happened in the past 30 years and what may happen in the next 30 years
TL;DR: In this paper, the development of ISFETs in an historical setting, but not limited to that, is described, based on the development regarding the theory, the technology, the instrumentation and the experience with many specific applications, also future projects are defined, such as concerning cell acidification, this paperET biasing and a complete new range of FET sensors based on local pressure induction by (bio)chemical interaction with immobilised charged molecules (hydrogels).
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Chemical Sensing and Catalysis by One-Dimensional Metal-Oxide Nanostructures
Andrei Kolmakov,Martin Moskovits +1 more
TL;DR: In this paper, the active nanowire sensor element in such devices can be configured either as resistors whose conductance is altered by charge transfer processes occurring at their surfaces or as field effect transistors whose properties can be controlled by applying an appropriate potential onto its gate.
Journal ArticleDOI
Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface
TL;DR: In this article, it is shown that the voltage drop depends on the pH of the electrolyte and is determined by two parameters, the pH at the point of zero charge, and a sensitivity parameter which is introduced in this paper.