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Journal ArticleDOI

Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices

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TLDR
In this article, a solution process was used to fabricate top-gate/bottom-contact (TG/BC) OFET devices with organic floating-gate structures and investigate their memory characteristics under light illumination.
About
This article is published in Organic Electronics.The article was published on 2019-04-01. It has received 32 citations till now. The article focuses on the topics: Organic memory & Organic field-effect transistor.

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Citations
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Journal ArticleDOI

Application of organic field-effect transistors in memory

TL;DR: A comprehensive summary of memory applications based on OFETs is made, through a detailed introduction of the background, memory mechanism and structure construction, and put forward challenges in the development of OFET memory.

Multi-Bit Non-Volatile Organic Transistor-Based Memory Using Lithium-Ion-Encapsulated Fullerene As a Charge Trapping Layer

TL;DR: In this paper, a multi-level nonvolatile organic transistor-based memory using pentacene semiconductor and a lithium-ion-encapsulated fullerene (Li + @C 60 ) as a charge trapping layer was reported.
Peer ReviewDOI

Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors

TL;DR: In this article , the basic design concepts, requirements, and architectures of phototransistor memory are introduced, and the operational mechanism and impact of effective combinations of channels and electrets are reviewed to provide a fundamental understanding of photoprogramming and its potential future developmental applications as nonvolatile memory.
Journal ArticleDOI

Photoerasable Organic Field-Effect Transistor Memory Based on a One-Step Solution-Processed Hybrid Floating Gate Layer

TL;DR: In this article, photo-erasable memories based on the organic field effect transistor (OFET) have aroused great interest due to the advantages and potential applications, such as the erasure of confidential informat...
Journal ArticleDOI

Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer

TL;DR: In this article, a nonvolatile OFET photoelectric memory with perovskite quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA) as charge trapping layer is reported.
References
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Journal ArticleDOI

Organic light detectors: photodiodes and phototransistors.

TL;DR: This review suggests that organic phototransistors have a large potential to be used in a variety of optoelectronic peculiar applications, such as a photo-sensor, opto-isolator, image sensor, optically controlled phase shifter, and opto -electronic switch and memory.
Journal ArticleDOI

Polymer and Organic Nonvolatile Memory Devices

TL;DR: In this article, the role of π-conjugated materials in the operation of nonvolatile memory devices is reviewed and a review of the state of the art with respect to these target specifications is presented.
Journal ArticleDOI

Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret**

TL;DR: In this paper, a poly(a-methylstyrene) (PaMS) layer was added to the SiO2 gate insulator and the pentacene channel in the typical OFET structure, and the results indicated reasonably good OFET behavior, suggesting the additional PaMS layer does not degrade the performance of the devices.
Journal ArticleDOI

Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate Memory

TL;DR: In this paper, a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported.
Journal ArticleDOI

Structure and Properties of Small Molecule−Polymer Blend Semiconductors for Organic Thin Film Transistors

TL;DR: A TIPS-pentacene/PalphaMS blend active layer is prepared with superior performance characteristics (field-effect mobility, on/off ratio, and threshold voltage) over those of neat TIPS, as well as the solution-processability of technologically attractive bottom-gate/bottom-contact OTFT devices.
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