Optoelectronic properties and Seebeck coefficient in SnSe thin films

TLDR: In this paper, the as-prepared SnSe thin films are characterized for their structural, optical and electrical properties by various experimental techniques, such as p-type conductivity, near-optimum direct band gap, high absorption coefficient and good photosensitivity of the thin film indicate its suitability for photovoltaic applications.

Abstract: SnSe thin films of thickness 180 nm have been deposited on glass substrates by reactive evaporation at an optimized substrate temperature of 523 ± 5 K and pressure of 10−5 mbar. The as-prepared SnSe thin films are characterized for their structural, optical and electrical properties by various experimental techniques. The p-type conductivity, near-optimum direct band gap, high absorption coefficient and good photosensitivity of the SnSe thin film indicate its suitability for photovoltaic applications. The optical constants, loss factor, quality factor and optical conductivity of the films are evaluated. The results of Hall and thermoelectric power measurements are correlated to determine the density of states, Fermi energy and effective mass of carriers and are obtained as 2.8 × 1017 cm−3, 0.03 eV and 0.05m 0 respectively. The high Seebeck coefficient ≈ 7863 μV/K, reasonably good power factor ≈ 7.2 × 10−4 W/(mK2) and thermoelectric figure of merit ≈ 1.2 observed at 42 K suggests that, on further work, the prepared SnSe thin films can also be considered as a possible candidate for cryogenic thermoelectric applications.