Proceedings ArticleDOI
Parameter extraction for relaxation-time based non-quasi-static MOSFET models
Z. Zhu,Colin C. McAndrew,Ik-Sung Lim,Gennady Gildenblat +3 more
- pp 196-200
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TLDR
In this paper, a new extraction technique for non-quasi-static (NQS) delay time and gate resistance for relaxation-time-approximation based MOS transistor models is presented.Abstract:
This paper presents a new extraction technique for non-quasi-static (NQS) delay time and gate resistance for relaxation-time-approximation based MOS transistor models. The technique is based on analysis of y dg in strong inversion, as a function of both V GS and frequency, for V DS = 0. An effective delay τ eff is computed from measured data, and a plot of τ eff versus the theoretical NQS-only delay allows the NQS relaxation time parameter and the gate resistance to be determined self-consistently.read more
References
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Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Proceedings ArticleDOI
An improved de-embedding technique for on-wafer high-frequency characterization
TL;DR: In this paper, an improved correction procedure for on-wafer S-parameter measurements has been developed and implemented, which takes the effects of series parasitics into account in a simple, straightforward way.
Journal ArticleDOI
A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation
TL;DR: In this article, a non-quasi-static (NQS) MOSFET model is proposed for both large-signal transient and small-Signal ac analysis, which employs a physical relaxation time approach to take care of the finite channel charging time.
Proceedings ArticleDOI
A large signal non-quasi-static MOS model for RF circuit simulation
TL;DR: A large-signal non-quasi-static (NQS) model for RF CMOS circuit simulation is presented that can be built from channel segments described by conventional QS models like BSIM3 or MOS Model 9.
Journal ArticleDOI
A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis
Dondee Navarro,Y. Takeda,Masataka Miyake,N. Nakayama,K. Machida,T. Ezaki,Hans Jurgen Mattausch,M. Miura-Mattausch +7 more
TL;DR: In this paper, a compact model of nonquasi-static (NQS) carrier-transport effects in MOSFETs is reported, which takes into account the carrier response delay to form the channel.
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