Phosphorus-doped silicon nanowires studied by near edge x-ray absorption fine structure spectroscopy

TLDR: In this paper, the electronic structure and chemical bonding of heavily phosphorus-doped silicon nanowires have been investigated by near edge x-ray absorption fine structure spectroscopy using total electron yield and xray fluorescence yield.

Abstract: The electronic structure and chemical bonding of heavily phosphorus-doped silicon nanowires have been investigated by near edge x-ray absorption fine structure spectroscopy using total electron yield and x-ray fluorescence yield. The results show that the wires are encapsulated within a silicon oxide layer and that the core of the nanowires was crystalline silicon doped with phosphorus. Phosphorus is found to be inside the core of the Si wire as well as at the silicon oxide–core silicon wire interface but not on the surface of the as-prepared nanowire.