Journal ArticleDOI
Plasma etching of III-V semiconductor thin films
Stephen J. Pearton,Fan Ren,T. R. Fullowan,Avishay Katz,William S. Hobson,U. K. Chakrabarti,Cammy R. Abernathy +6 more
TLDR
In this article, the authors describe the use of various plasma etching techniques in III-V semiconductor technology, which is consistent with an integrated processing concept in that plasma etch is a vacuum technique, and the dry etch reactor chamber can be coupled with other deposition, annealing or epitaxial growth chambers via load locks and transfer arms.About:
This article is published in Materials Chemistry and Physics.The article was published on 1992-10-01. It has received 21 citations till now. The article focuses on the topics: Dry etching & Reactive-ion etching.read more
Citations
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Journal ArticleDOI
Dry Etching of Electronic Oxides, Polymers, and Semiconductors
TL;DR: A review of commonly used plasma etching techniques and typical plasma chemistries for patterning electronic oxides, such as SiO2, HfO 2, MgO, Sc2O3, and ZnO, polymers, and several important semiconductors (Si, GaAs, and InP) is given in this paper.
Journal ArticleDOI
Micro-Light Emitting Diode: From Chips to Applications
Journal ArticleDOI
High ion density dry etching of compound semiconductors
TL;DR: In this article, the use of several types of electron cyclotron resonance (ECR) plasma sources and contrast the result with those obtained under reactive ion etching conditions is discussed.
Journal ArticleDOI
High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess
TL;DR: An optimized pseudomorphic high electron mobility transistor (PHEMT) epitaxial structure processed with a novel single gate recess technique is shown to achieve 850 mW of output power (760 mW/spl middot/mm/sup -1/ saturated power density) with 50% power added efficiency at X-band when operated at a CW and nearly class A condition as discussed by the authors.
Journal ArticleDOI
Optical emission end point detection for via hole etching in InP and GaAs power device structures
TL;DR: In this paper, narrow via holes have been etched in both InP and GaAs substrates using Cl 2 CH 4 ǫ-H 4 à ¼ H 2 à ΩAr and BCl 3 ü Cl 2 discharges respectively, with side wall passivation obtained using AZ 4620 photoresist masks.
References
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Journal ArticleDOI
Whispering-gallery mode microdisk lasers
TL;DR: In this paper, a new microlaser design based on the highreflectivity whisperinggallery modes around the edge of a thin semiconductor microdisk is described and initial experimental results are presented.
Journal ArticleDOI
Plasma etching—A discussion of mechanisms
J. W. Coburn,Harold F. Winters +1 more
TL;DR: In this paper, the etching process is discussed in terms of three basic steps: adsorption, product formation, and product desorption with the goal of clarifying the relative importance of these three steps.
Book
Plasma etching : an introduction
Dennis M. Manos,Daniel L. Flamm +1 more
TL;DR: A.R. Cohen, An Introduction to Plasmas for Materials Processing as discussed by the authors, and G.K.Herb, Safety, Health, and Engineering Considerations for Plasma Processing.
Journal ArticleDOI
Electron cyclotron resonance microwave discharges for etching and thin‐film deposition
TL;DR: In this paper, the basic physics of ECR discharges and the associated microwave system and applicator technologies are reviewed and compared and several ECR plasma processing reactors are also described.
Journal ArticleDOI
Subpicosecond InP/InGaAs heterostructure bipolar transistors
TL;DR: In this paper, the authors show that an f/sub $/T beyond 386 GHz is obtainable by further vertical scaling of InP/InGaAs transistors with sub-picosecond extrinsic delay.