Radiation Effects in Advanced and Emerging Nonvolatile Memories
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In this paper, the material and device physics, fabrication, operational principles, and commercial status of scaled 2D flash, 3D flash and emerging memory technologies are discussed, including the physics of and errors caused by total ionizing dose, displacement damage, and single event effects.Abstract:
Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.read more
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Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation
Tobias Vogel,Alexander Zintler,Nico Kaiser,N. Guillaume,Gauthier Lefevre,Maximilian Lederer,Anna Lisa Serra,Eszter Piros,Taewook Kim,Philipp Schreyer,M. Winkler,Déspina Nasiou,Ricardo Olivo,Tarek Ali,David Lehninger,A.V. Arzumanov,Christelle Charpin-Nicolle,G. Bourgeois,L. Grenouillet,M.-C. Cyrille,Gabriel Navarro,Konrad Seidel,Thomas Kämpfe,Stefan Petzold,Christina Trautmann,Leopoldo Molina-Luna,Lambert Alff +26 more
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Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory
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