Journal ArticleDOI
Realization of Mg(x=0.15)Zn(1−x=0.85)O-based metal-semiconductor-metal UV detector on quartz and sapphire
TLDR
In this paper, the growth of hexagonal phase MgZnO on nonconventional substrates such as quartz and on sapphire for comparison of the device property is reported.Abstract:
In this article we present the growth of hexagonal phase MgZnO on nonconventional substrates such as quartz and on sapphire for comparison of the device property. We are reporting the realization of MgZnO-based UV detector on quartz by the pulsed laser deposition technique. MgZnO films are characterized by x-ray diffraction, UV-visible spectroscopy, and Rutherford backscattering-channeling techniques. The morphology of the films is studied by atomic force microscopy. The metal-semiconductor-metal device was fabricated on the MgZnO film to study the device photoresponse under proper UV irradiation.read more
Citations
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Journal ArticleDOI
ZnO-Based Ultraviolet Photodetectors
TL;DR: The performance of ZnO-based photodetectors is analyzed, discussing recent achievements, and comparing the characteristics of the variousPhotodetector structures developed to date.
Journal ArticleDOI
Semiconductor ultraviolet photodetectors based on ZnO and MgxZn1−xO
TL;DR: In this paper, the authors studied the latest progress of UV photodetectors made on ZnO and MgxZn1−xO, which is a representative alloy of ZnOs for band-gap engineering techniques.
Journal ArticleDOI
Ultraviolet photodetector based on a MgZnO film grown by radio-frequency magnetron sputtering.
Yanmin Zhao,Jiying Zhang,Dayong Jiang,Chongxin Shan,Zhenzhong Zhang,Bin Yao,Dongxu Zhao,Dezhen Shen +7 more
TL;DR: The metal-semiconductor-metal ultraviolet (UV) photodetector was fabricated on the Mg( 0.47)Zn(0.53)O layer grown by radio-frequency magnetron cosputtering and it was found that the rise time is 10 ns and the fall time is 30 ns, the reason for the short response time is related to the Schottky structure.
Journal ArticleDOI
Ultra violet sensors based on nanostructured ZnO spheres in network of nanowires: a novel approach
TL;DR: In this article, the ZnO nanostructures consisting of micro spheres in a network of nano wires were synthesized by direct vapor phase method and X-ray Photoelectron Spectroscopy measurements were carried out to understand the chemical nature of the sample.
Journal ArticleDOI
Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection
TL;DR: In this article, a p-n photodiode was fabricated on (000l) Al2O3 substrate by plasma-assisted molecular beam epitaxy, and the photodetector showed fast photoresponse with a rise time of 10ns and fall time of 150ns.
References
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Journal ArticleDOI
Recent Advances in ZnO Materials and Devices
TL;DR: Wurtzitic ZnO is a widebandgap semiconductor which has many applications, such as piezoelectric transducers, varistors, phosphors, and transparent conducting films as discussed by the authors.
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Optically pumped lasing of ZnO at room temperature
TL;DR: In this paper, the authors reported the observation of optically pumped lasing in ZnO at room temperature using a plasma-enhanced molecular beam epitaxy on sapphire substrates.
Journal ArticleDOI
MgxZn1−xO as a II–VI widegap semiconductor alloy
Akira Ohtomo,Megumi Kawasaki,Takashi Koida,K. Masubuchi,Hideomi Koinuma,Y. Sakurai,Yasuhiko Yoshida,Tadashi Yasuda,Yusaburo Segawa +8 more
TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
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Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature
TL;DR: In this paper, room temperature free excition absorption and luminescence were observed in ZnO thin films grown on sapphire substrates by the laser molecular beam epitaxy technique.
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ZnO Schottky ultraviolet photodetectors
TL;DR: In this paper, the results of Schottky UV photodetectors fabricated on n-type ZnO epitaxial films were presented, which were grown on R-plane sapphire substrates by metalorganic chemical vapor deposition.