Recent advances in pulsed-laser deposition of complex oxides
Hans M. Christen,Gyula Eres +1 more
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TLDR
Detailed growth kinetics results are discussed, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness.Abstract:
Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well controlled interfaces. The first part of this paper presents a review of several useful modifications of the process, including methods inspired by combinatorial approaches. We then discuss detailed growth kinetics results, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness. Time-resolved surface x-ray diffraction measurements show that crystallization and the majority of interlayer mass transport occur on timescales that are comparable to those of the plume/substrate interaction, providing direct experimental evidence that a growth regime exists in which non-thermal processes dominate PLD. This understanding shows how kinetic growth manipulation can bring PLD closer to ideal LBL than any other growth method available today.read more
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References
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High-throughput growth temperature optimization of ferroelectric SrxBa1−xNb2O6 epitaxial thin films using a temperature gradient method
Isao Ohkubo,Hans M. Christen,Sergei V. Kalinin,Gerald Earle Jellison Jr,Christopher M. Rouleau,D. H. Lowndes +5 more
TL;DR: In this paper, a multisample film growth method on a temperature-gradient substrate holder was developed to quickly optimize the film growth temperature in pulsed-laser deposition, and the optimal growth temperature for SrxBa1−xNb2O6 thin films on MgO(001) substrates was determined.
Journal ArticleDOI
Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties
TL;DR: In this paper, thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated.
Journal ArticleDOI
Imposed layer-by-layer growth by pulsed laser interval deposition
TL;DR: In this paper, the influence of different parameters on the growth mode was studied using pulsed laser deposition (PLD) and Reflection High-Energy Electron Diffraction (RHEED).
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Ti and Ca substitution in SrRuO3 thin films by sequential deposition process
TL;DR: In this article, the growth and properties of (Sr1−xCax)RuO3 and (Ru 1−xTix)O3 thin films obtained by sequential deposition of submonolayers from end members of each compound are reported.
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