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Recent advances in pulsed-laser deposition of complex oxides

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TLDR
Detailed growth kinetics results are discussed, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness.
Abstract
Pulsed-laser deposition (PLD) is one of the most promising techniques for the formation of complex-oxide heterostructures, superlattices, and well controlled interfaces. The first part of this paper presents a review of several useful modifications of the process, including methods inspired by combinatorial approaches. We then discuss detailed growth kinetics results, which illustrate that 'true' layer-by-layer (LBL) growth can only be approached, not fully met, even though many characterization techniques reveal interfaces with unexpected sharpness. Time-resolved surface x-ray diffraction measurements show that crystallization and the majority of interlayer mass transport occur on timescales that are comparable to those of the plume/substrate interaction, providing direct experimental evidence that a growth regime exists in which non-thermal processes dominate PLD. This understanding shows how kinetic growth manipulation can bring PLD closer to ideal LBL than any other growth method available today.

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Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films

TL;DR: The growth and characterization of functional oxide thin films that are ferroelectric, magnetic, or both at the same time are reviewed in this article, where the evolution of synthesis techniques and how advances in in situ characterization have enabled significant acceleration in improvements to these materials are described.
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High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
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Lithium/Sulfide All‐Solid‐State Batteries using Sulfide Electrolytes

TL;DR: The required properties of the sulfide electrolytes, such as the electrochemical stabilities of the electrolytes and the compatible electrode/electrolyte interfaces are highlighted, and the opportunities for sulfide-based ASSLBs are discussed.

Superlattices and microstructures

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References
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Journal ArticleDOI

Understanding crystal growth in vacuum and beyond

TL;DR: In this article, the atomic-scale structure of the growing interface of a growing crystal is studied using X-ray diffraction and structural details like relaxation and reconstruction on the crystal surface and ordering in the solution can be included in the theoretical description of crystal growth.
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High-throughput growth temperature optimization of ferroelectric SrxBa1−xNb2O6 epitaxial thin films using a temperature gradient method

TL;DR: In this paper, a multisample film growth method on a temperature-gradient substrate holder was developed to quickly optimize the film growth temperature in pulsed-laser deposition, and the optimal growth temperature for SrxBa1−xNb2O6 thin films on MgO(001) substrates was determined.
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Thin film deposition of Ge33As12Se55 by pulsed laser deposition and thermal evaporation: Comparison of properties

TL;DR: In this paper, thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated.
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Imposed layer-by-layer growth by pulsed laser interval deposition

TL;DR: In this paper, the influence of different parameters on the growth mode was studied using pulsed laser deposition (PLD) and Reflection High-Energy Electron Diffraction (RHEED).
Journal ArticleDOI

Ti and Ca substitution in SrRuO3 thin films by sequential deposition process

TL;DR: In this article, the growth and properties of (Sr1−xCax)RuO3 and (Ru 1−xTix)O3 thin films obtained by sequential deposition of submonolayers from end members of each compound are reported.
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